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Origin of Persistent Photoconductivity in Modulation Doped Amorphous Silicon Multilayers

Published online by Cambridge University Press:  28 February 2011

S. C. Agarwal  and
S. Guha
S. C. Agarwal
Affiliation:
On leave from the Physics Department, Indian Institute of Technology, Kanpur 208 016, India
S. Guha
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

We show that persistent photoconductivity (PPC) observed in npn … multilayers of hydrogenated amorphous silicon (a-Si:H) and compensated thin a-Si:H films have a common origin. It is caused by special centers lying in the upper half of the mobility gap. The centers are not related to the presence of argon during deposition. Similarities of PPC between the layered and compensated films are shown. We also find that PPC in compensated samples, is not entirely a surface effect. Experiments are suggested to decide whether these centers are P-B complexes or can arise from the presence of boron alone.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 441
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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