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Oriented Carbon Pair Defects Stabilized by Hydrogen in as-Grown GaAs Epitaxial Layers

Published online by Cambridge University Press:  22 February 2011

Y.M. Cheng ,
M. Stavola ,
C.R. Abernathy  and
S.J. Pearton
Y.M. Cheng
Affiliation:
Physics Department, Lehigh University, Bethlehem, Pennsylvania 18015
M. Stavola
Affiliation:
Physics Department, Lehigh University, Bethlehem, Pennsylvania 18015
C.R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S.J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have studied the IR absorption of heavily carbon doped GaAs grown by metalorganic molecular beam epitaxy. A striking observation is that the hydrogen-stretching vibration of a Crelated complex at 2688 cm−1 is strongly polarized along just one of the <110> directions in the (001) growth plane. This polarized C-H vibration is assigned to a defect complex that is aligned at the growth surface and then maintains its alignment as it is incorporated into the growing crystal. In a series of experiments, we have studied the annealing of the 2688 cm−1 band and its alignment and suggest that the defect complex consists of a CAs-CAs pair stabilized by hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 273
Copyright
Copyright © Materials Research Society 1994

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