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Orientation Dependent Epitaxial Growth of CeO2 Layers on Si Substrates

Published online by Cambridge University Press:  21 February 2011

T. Inoue ,
T. Ohsuna ,
Y. Yamamoto ,
Y. Sakurai ,
L. Luo ,
X. D. Wu  and
C. J. Maggiore
T. Inoue
Affiliation:
Department of Electronic Engineering, Iwaki Meisei University, 5–5–1 lino-Chuoudai, Iwaki, Fukushima 970, Japan
T. Ohsuna
Affiliation:
Department of Electronic Engineering, Iwaki Meisei University, 5–5–1 lino-Chuoudai, Iwaki, Fukushima 970, Japan
Y. Yamamoto
Affiliation:
Research Center of Ion Beam Technology, Hosei University, 3–7–2 Kajino-cho, Koganei, Tokyo 184, Japan
Y. Sakurai
Affiliation:
Research Center of Ion Beam Technology, Hosei University, 3–7–2 Kajino-cho, Koganei, Tokyo 184, Japan
L. Luo
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
X. D. Wu
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
C. J. Maggiore
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
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Abstract

Cerium dioxide (CeO2) layers epitaxially grown on (100), (111) and (110) silicon substrates by electron beam evaporation in an ultra-high vacuum were investigated. CeO2 layers on Si (111) substrates were proved to be epitaxially grown at the substrate temperature above 200°C, and had considerably good crystalline quality. On the other hand, CeO2 layers grown on Si (100) at 800°C consisted of more than 98% volume fraction of (110) component. Cross-sectional high resolution transmission electron microscopy and selected area electron diffraction verified clearly the above crystallography orientation and that the <100> direction in the CeO2(110) plane was parallel with the <110> direction in the Si (100) plane. The cross-sectional lattice image confirmed the existence of ∼ 6 nm-thick intermediate amorphous layer between the CeO2 layer and the Si substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 589
Copyright
Copyright © Materials Research Society 1992

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References

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