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Organometallic Epitaxy of Extrinsic N-Type HgCdTe Using Trimethylindium

Published online by Cambridge University Press:  25 February 2011

N.R. Taskar ,
K.K. Parat ,
I.B. Bhat  and
S.K. Chandhi
N.R. Taskar
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
K.K. Parat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
I.B. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
S.K. Chandhi
Affiliation:
Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

Indium doping of mercury cadmium telluride, grown by organometallic epitaxy, has been accomplished using trimethylindium (TMIn) as the dopant source. Layers, grown by the Direct Alloy Growth (DAG) process, exhibited a linear doping vs TMIn partial pressure characteristic over the 5 × 1016 to 3 × 1018 cm−3 range. A maximum doping concentration of 5 × 1018 cm−3 was obtained in these layers.

The optical band edge in these layers was observed to move to higher energy with increased doping. It is shown that this is caused by the Burstein-Moss shift of the bandedge with doping, and that the Cd fraction is independent of the doping concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 29
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Irvine, S.J. and Mullin, J.B., J. Crys. Growth, 55, 107 (1981).CrossRefGoogle Scholar
2. Ghandhi, S.K. and Bhat, I.B., Appl. Phys. Lett., 44, 779 (1984).Google Scholar
3. Hoke, W.E., Lemonias, P.J. and Taczewski, R., Appl. Phys. Lett., 45, 1092 (1984).CrossRefGoogle Scholar
4. Ghandhi, S.K., Bhat, I.B. and Fardi, H., Appl. Phys. Lett., 52, 392 (1988).Google Scholar
5. Thompson, J., Mackett, P., Smith, L.M., Cole-Hamilton, D.J. and ShenaiKhatkhate, D.V., J. Crys. Growth, 86, 233 (1988).CrossRefGoogle Scholar
6. Vydyanath, H.R. and Kroger, F.A., J. Electron. Mater., 11, 111 (1982}.Google Scholar
7. Ghandhi, S.K., Taskar, N.R., Parat, K.K. and Bhat, I.B., Appl. Phys. Lett., 57 (3) 252 (1990).Google Scholar
8. Whiteley, J.S., Koppel, P., Conger, V.L. and Owens, R.E., J. Vac. Sci. Tech., A6 (4) 2804 (1988).Google Scholar
9. Boukerche, M., Reno, J., Sou, I.K., Hsu, C. and Faurie, J.P., Appl. Phys. Lett., 48, 1733, 1986.Google Scholar
10. Qian, D., Tang, W., Shen, J., Chu, J. and Zheng, C., Sol. St. Comm., 56, 813, 1985.Google Scholar