Skip to main content Accessibility help
×
Home

The Organometallic Chemical Vapor Deposition of Transition Metal Carbides: the Use of Homoleptic Alkyls

  • Matthew D. Healy (a1), David C. Smith (a1), Rodrigo R. Rubiano (a2), Robert W. Springer (a3) and John E. Parmeter (a4)...

Abstract

The organometallic chemical vapor deposition (OMCVD) of transition metal carbides (M = Ti, Zr, Hf, and Cr) from tetraneopentyl-metal precursors has been carried out. Metal carbides can be deposited on Si, A120 3, and stainless steel substrates from M[CH 2C(CH3)3]4 at temperatures in the range of 300 to 750 "C and pressures from 10-2 to 10-4 Torr. Thin films have also been grown using a carrier gas (Ar, H2). The effects of variation of the metal center, deposition conditions, and reactor design on the resulting material have been examined by SEM, XPS, XRD, ERD and AES. Hydrocarbon fragments generated in the deposition chamber have been studied by in-situ mass spectrometry. Complimentary studies examining the UHV surface decomposition of Zr[CH2C(CH3)3]4 have allowed for a better understanding of the mechanism leading to film growth.

Copyright

References

Hide All
1. a) Zinn, A., Niemer, B., and Kaesz, H.D., Adv. Mater. 4, 375 (1992). b) F. Maury, Adv. Mater. 3, 542 (1991).
2. Mond, L., Langer, C., and Quincke, F., J. Chem. Soc. 57, 749 (1890).
3. Manasevit, H.M., J. Crystal Growth 55, 1 (1981).
4. Girolami, G.S., Jensen, J.A., Pollina, D.M., Williams, W.S., Kaloyeros, A.E., and Alloca, C.M., J. Am. Chem. Soc. 109, 1579 (1987).
5. Hollabaugh, C.M., Wahman, L.A., Reiswig, R.D., White, R.W., and Wagner, P., Nuclear Technology 35, 527 (1977).
6. Smith, D.C., Rubiano, R.R., Healy, M.D., and Springer, R.W. in Chemical Perspectives of Microelectronic Materials III, edited by Abernathy, C.R., Bates, C.W. Jr., Bohling, D.A., and Hobson, W.S. (Mater. Res. Soc. Proc. 282, Pittsburgh, PA, 1993) pp. 643649.
7. Healy, M.D., Smith, D.C., Rubiano, R.R., Elliott, N.E., and Springer, R.W., Chem. Mater., submitted.
8. Rutherford, N.M., Larsen, C.E., and Jackson, R.L. in Chemical Perspectives of Microelectronic Materials, edited by Gross, M.E., Jasinski, J.M., and Yates, J.T. Jr., (Mater. Res. Soc. Proc. 131, Pittsburgh, PA, 1989) pp.439445.
9. Muary, F. and Ossola, F., Thin Solid Films 207, 82 (1992).
10. a) Parmeter, J.E., Smith, D.C., and Healy, M.D., J. Vac. Sci. Technol., submitted. b) J.E. Parmeter, J. Phys. Chem. 97, 11530 (1993).
11. Davidson, P.J., Lappert, M.F., and Pearce, R., Chem. Rev. 76, 219 (1976).
12. Groshens, T.J., Lowe-Ma, C.K., Scher, R.C., and Dalbey, R.Z. in Chemical Perspectives of Microelectronic Materials III, edited by Abernathy, C.R., Bates, C.W. Jr., Bohling, D.A., and Hobson, W.S. (Mater. Res. Soc. Proc. 282, Pittsburgh, PA, 1993) pp. 299304.
13. Cr7C3 is a known phase. Reference is made to the JCPDS file number 361482.
14. Muary, F., Ossola, F., and Schuster, F., Surf. Coat. Technol. 54/55, 204 (1992).
15. Davidson, P.J., Lappert, M.F., and Pearce, R., J. Organomet. Chem. 57, 269 (1973).
16. Our observed neopentane/isobutylene ratios under CVD conditions are 2.03 (Ti); 0.99 (Zr); 0.69 (Hf); 0.76 (Cr). These values have been corrected for instrument sensitivity using isobutylene and neopentane. We believe that these values are correct to within 10%. Full details will be published in due course.
17. Because of the carbon isotopic ratio, the m/e = 15 feature is accompanied by a 1% relative intensity m/e = 16 feature. When methane is present, m/e = 16 is significantly more intense.
18. Neopentane does not have an observable C5 fragment under our conditions.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed