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Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films

  • W. A. Feil (a1), B. W. Wessels (a1), L. M. Tonge (a2) and T. J. Marks (a2)

Abstract

SrTiO3 thin films were deposited by low pressure organometallic chemical vapor deposition on silicon substrates using the volatile metal-organic precursors titanium isopropoxide and Sr(dipivaloylmethanate)2. Oxygen and water vapor were used as reactant gases and argon was used as a carrier gas. Growth rates ranging from 0.6–2.1 μm/hr were obtained at 650–800°C. Polycrystalline films were obtained at growth temperatures of 650–750°C, and amorphous films above 750°C. SrTiO3 films deposited on silicon substrates exhibited resistivities greater than 109 Ω-cm and dielectric constants up to 100.

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Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films

  • W. A. Feil (a1), B. W. Wessels (a1), L. M. Tonge (a2) and T. J. Marks (a2)

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