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Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux

  • Mourad Benamara (a1), Yuriy I. Mazur (a1), Peter Lytvyn (a1) (a2), Morgan E. Ware (a1), Vitaliy Dorogan (a1), Xian Hu (a1), Leonardo D. de Souza (a1) (a3), Euclydes Marega (a3), Marcio Theodores (a3), Gilmar Marques (a3) and Greg Salamo (a1)...


The influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.


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