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Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD

  • Y. Okada (a1), I. H. Campbell (a1), P. M. Fauchet (a1) and S. Wagner (a1)

Abstract

Microcrystalline Si was grown from SiF4 and H2 by plasma-enhanced chemical vapor deposition. The films are almost completely crystalline with a crystallite size (determined from Raman spectra) of about 60 Å. The optical absorption and the electrical conductivity of these films were studied. With increasing hydrogen content in the films, the dark conductivity decreases strongly and the activation of the conductivity increases. We explain the conductivity qualitatively in terms of a grain boundary model.

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1. Matsuda, A., Yamasaki, S., Nakayama, K., Okushi, H., Tanaka, K., Iizima, S., Matsumura, M. and Yamamoto, H., Jpn. J. Appl. Phys. 19, L305 (1980)
2. Matsuda, A., Matsumura, M. Yamasaki, S., and Yamamoto, H., Imura, T., Okushi, H., Iizima, S. and Tanaka, K., Jpn. J. Appl. Phys. 20, L183 (1981)
3. Richter, H. and Ley, L., J. Appl. Phys. 52, 7281 (1981)
4. Furukawa, S. and Miyasato, T., Phys. Rev. B33, 5726 (1988)
5. Guimaraes, J. L., Martins, R., Fortunato, E., Ferreira, I., Santos, M. and Garvalho, N., Mat. Res. Soc. Symp. Proc. 118, 617 (1988)
6. Martins, R., Vieira, M., Fortunato, E., Santos, M., Ferreira, I., Lavado, M. and Guimaraes, L., Conference Record of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, p35, Yorktown Hights, New York, Nov. 21-23, 1988
7. Matsumura, M., Conference Record of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, p 115, Yorktown Hights, New York, Nov. 21-23, 1988
8. Essick, J. M. and Cohen, J. D., Appl. Phys. Lett. 55, 1232 (1989)
9. Fujiioka, H., Deguchi, T., Takazaki, K. and Takada, T., IEDM Tech. Dig., p574 (1988)
10. Sasaki, K., Fukuzawa, T. and Furukawa, S., IEDM Tech. Dig., p186 (1987)
11. LeComber, P. G., Willeke, G. and Spear, W. E., J. Non-cryst. Solids 59&60, 759 (1983)
12. Seto, J. Y. W., J. Appl. Phys. 46, 5247 (1975)
13. Baccarani, G., Ricco, B. and Spadini, G., J. Appl. Phys. 49, 5565 (1978)
14. Mishima, Y., Miyazaki, S., Hirose, M. and Osaka, Y., Phil. Mag. B46, 1 (1982)
15. Komura, S., Aoyagi, Y., Segawa, Y., Namba, S., Matsuyama, A., Matsuda, A. and Tanaka, K., J. Appl. Phys. 56, 1658 (1984)
16. Konuma, M., Curtins, H., Sarott, F.-A. and Veprek, S., Phil. Mag. B55, 377 (1987)
17. Shibata, N., Fukuda, K., Ohtoshi, H., Hanna, J., Oda, S. and Shimizu, I., Jpn. J. Appl. Phys. 26, L10 (1987)
18. Tanabe, H., Azuma, M., Uematsu, T., Shirai, H., Hanna, J., Shimizu, I., Mar. Res. Soc. Symp. Proc. 149, 17 (1989)
19. Okada, Y., Chen, J., Campbell, I. H., Fauchet, P. M. and Wagner, S., Mar. Res. Soc. Symp. Proc. 149, 93 (1989)
20. Okada, Y., Chen, J., Campbell, I. H., Fauchet, P. M. and Wagner, S., J. Appl. Phys., February 1990
21. Slobodin, D., Alijishi, S., Schwarz, R. and Wagner, S., Mat. Res. Soc. Symp. Proc. 49, 153 (1985)
22. Fang, C. J., Gruntz, K. J., Ley, L. and Cardona, M., J. Non-Cryst. Solids 32, 405 (1979)
23. Campbell, I. H. and Fauchet, P. M., Solid State Comm. 58, 739 (1986)
24. Fauchet, P. M. and Campbell, I. H., CRC Crit. Rev. Solid State Mat. Sci. 14, S79 (1988)
25.Handbook of Optical Constants of Solids”, ed. by Palik, E. D., Academic Press, New York, 1985

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Opto-Electronic Properties of μc-Si Grown from SiF4 and H2 by PECVD

  • Y. Okada (a1), I. H. Campbell (a1), P. M. Fauchet (a1) and S. Wagner (a1)

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