Skip to main content Accessibility help
×
Home

Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4

  • Chung-Hsiang Chang (a1), Chin-Hua Hsieh (a2), Li-Jen Chou (a3) and Gong-Ru Lin (a4)

Abstract

Effect of O/Si composition ratio on near-infrared photoluminescence (PL) of PECVD grown Si-rich SiOx after 1100°C annealing are analyzed by Rutherford backscattering (RBS) and Fourier-transformed infrared spectroscopy (FTIR) to show nonlinear relationship with strongest PL at 760 nm at optimized O/Si = 1.24, total Si concentration of 44.6 atom.%, and N2O/SiH4 fluence ratio of 4.5. A nearly Gaussian function of the normalized PL intensity vs. O/Si composition ratio has been observed due to the significant variation on the Si nanocrystals size with the density of the excessive Si atoms.

Copyright

References

Hide All
1. Ye, Q. Tsu, R. and Nicollian, E. H.Resonant tunneling via microcrystalline-silicon quantum confinement,” Phys. Rev. B, vol. 44, pp. 18061811 (1991).
2. Pérez-Rodrìguez, A., González-Varona, O., Garrido, B. Pellegrino, P. Morante, J. R. Bonafos, C. Carrada, M. and Claverie, A.White luminescence from Si+ and C+ ion-implanted SiO2 films,” J. Appl. Phys., vol. 94, pp. 254262 (2003).
3. Pacifici, D. Moreira, E. C. Franzo, G. Martorino, V. and Priolo, F.Defect production and annealing in ion-irradiated Si nanocrystals,” Phys. Rev. B, vol. 65, 144109 (2002).
4. Canham, L. T.Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett., vol. 57, pp. 10461048 (1990).
5. Neufeld, E. Wang, S. Apetz, R. Buchal, C. Carius, R. White, C.W. and Thomas, D.K.Effect of annealing and H2 passivation on the photoluminescence of Si nanocrystals in SiO2 ,” Thin Solid Films, vol. 294, pp.238241 (1997).
6. Withrow, S.P. White, C.W. Meldrum, A. Budai, J.D. Hembree, D.M. and Barbour, J.C.Effects of hydrogen in the annealing environment on photoluminescence from Si nanoparticles in SiO2 ,” J. Appl. Phys., vol. 86, pp. 396401 (1999).
7. Cheylan, S. and Elliman, R.G.Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrix,” Appl. Phys. Lett., vol. 78 (2001).
8. Brower, K.L.Kinetics of H2 passivation of Pb centers at the (111) Si-SiO2 interface,” Phys. Rev. B, vol. 38, pp.96579666 (1988).
9. Stathis, J.H. and Cartier, E.Atomic hydrogen reactions with Pb centers at the (100) Si/SiO2 interface,” Phys. Rev. Lett., vol. 72, pp.27452748 (1994).
10. Delerue, C. Allan, G. and Lannoo, M.Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B, vol. 48, pp. 1102411036 (1993).
11. Williams, David B. and Carter, C. Barry, Transmission electron microscopy: a textbook for materials science, Plenum Press, New York, 1996.
12. Wang, Y. Q. Kong, G. L. Chen, W. D. Diao, H. W. Chen, C. Y. Zhang, S. B. and Liao, X. B.Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix,” Appl. Phys. Lett., vol. 81, pp. 41744176 (2002).
13. Gonzalez, P. Fernandez, D. Pou, J. Garcia, E. Serra, J. Leon, B. Perez-Amor, M., Szorenyi, T.Study of the Gas-Phase Parameters Affecting the Silicon-Oxide Film Deposition Induced by an ArF Laser,” Appl. Phys. A, vol. 57, pp. 181185 (1993).
14. Jambois, O. Rinnert, H. Devaux, X., and Vergnat, M., “Influence of the annealing treatments on the luminescence properties of SiO/SiO2 multilayers,” J. Appl. Phys., vol. 100, Art. No. 123504 (2006).
15. Ay, F. Aydinli, A.Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides,” Optical Materials, vol. 26, pp.3346 (2004).
16. Yuna, F. Hindsa, B.J. Hatatania, S. Odaa, S., Zhaob, Q.X. Willander, M.Study of structural and optical properties of nanocrystalline silicon embedded in SiO2 ,” Thin Solid Films, vol. 375, pp.137141 (2000).
17. Cho, Chang-Hee, Kim, Baek-Hyun, Kim, Tae-Wook, and Park, Seong-Ju, Park, Nae-Man and Sung, Gun-Yong, “Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film,” Appl. Phys. Lett., vol. 86, pp. 143107 (2005).
18. Guhaa, S. Qadri, S. B. Musket, R. G. Wall, M. A. and Shimizu-Iwayama, Tsutomu, “Characterization of Si nanocrystals grown by annealing SiO2 films with uniform concentrations of implanted Si,” J. Appl. Phys., vol. 88, pp. 39543961 (2000).

Keywords

Optimized O/Si Composition Ratio for Enhancing Si Nanocrystal Based Luminescence in Si-rich SiOx Grown by PECVD with Argon Diluted SiH4

  • Chung-Hsiang Chang (a1), Chin-Hua Hsieh (a2), Li-Jen Chou (a3) and Gong-Ru Lin (a4)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed