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Optimization of p-type AlGaN/GaN and GaN/InGaN Superlattice Design for Enhanced Vertical Transport

Published online by Cambridge University Press:  01 February 2011

M. Z. Kauser ,
A. Osinsky ,
J. W. Dong ,
B. Hertog ,
A. Dabiran  and
P. P. Chow
M. Z. Kauser
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344, USA. Dept. of ECE, University of Minnesota, 200 Union St. SE., Minneapolis, MN 55455, USA.
A. Osinsky
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344, USA.
J. W. Dong
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344, USA.
B. Hertog
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344, USA.
A. Dabiran
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344, USA.
P. P. Chow
Affiliation:
SVT Associates, 7620 Executive Drive, Eden Prairie, MN 55344, USA.
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Abstract

We report on p-type AlGaN/GaN and GaN/InGaN superlattice (SL) designs with significantly improved vertical and lateral electrical conductivity (σV and σL). Composition-graded p–AlGaN layers were used to produce eight fold reduction in barrier height and a ∼40% increase in the sheet hole density in the p-GaN wells compared to typical SL structures. Thirteen orders of magnitude and 35 times improvement is obtained for σV and σL compared to typical SL and bulk p-GaN, respectively. A similar approach for p-GaN/InGaN SL resulted in seven fold reduction in barrier height and a ∼30% increase in the sheet hole density in the p-InGaN wells compared to a typical SL structures. σL is strongly dependent on hole mobility in the well and about 19 times improvement is obtained for the optimized design, SL-B, with μp=30 cm2 V-1s-1 compared to bulk-InGaN. More than 10 orders of magnitude improvement in σV is obtained for SL-B compared to modulation doped SL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.39
Copyright
Copyright © Materials Research Society 2005

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References

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