Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-19T09:05:36.078Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimization of Pecvd Sin Films Using A Statistically Designed Experiment

Published online by Cambridge University Press:  10 February 2011

Steven K. Brierley ,
Thomas E. Kazior  and
Lan Nguyen
Steven K. Brierley
Affiliation:
Raytheon Advanced Device Center, 362 Lowell Street, Andover, MA 01810
Thomas E. Kazior
Affiliation:
Raytheon Advanced Device Center, 362 Lowell Street, Andover, MA 01810
Lan Nguyen
Affiliation:
Raytheon Advanced Device Center, 362 Lowell Street, Andover, MA 01810
Get access

Abstract

A statistically designed experiment was run to optimize the deposition of PECVD SiN on GaAs substrates. Five deposition parameters were varied: RF power, temperature, pressure, plasma frequency, and ammonia/silane ratio. Four film properties were used to evaluate the quality of the nitride: the fraction of hydrogen bound to nitrogen atoms, the index of refraction (and its uniformity), thickness uniformity, and stress. From the screening phase of the experiment, it was determined that only the plasma frequency and ammonia/silane ratio influenced the quality of the nitride film. High frequency deposition was preferable to low frequency deposition since it resulted in lower film stress. The results of the optimization phase showed that SiN films with near‐zero stress, low N‐H bond density and good index of refraction could be obtained by deposition at a very low ammonia/silane ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 121
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chow, R., Lanford, W.A., Ke‐Ming, W., and Rosier, R.S., J. Appl. Phys., 53, 5630 (1982)Google Scholar
2 Roizin, Y., J. Non‐Crystalline Solids, 137/138, 61 (1991)Google Scholar
3 Brierley, S.K., Nguyen, L., paper K3.9, this volume.Google Scholar
4 Robertson, J. and Powell, M.J., Appl. Phys. Lett, 44, 415 (1984)Google Scholar
5 Bagnoli, P.E., Piccirillo, A., Gobbi, A.L., and Giannetti, R., Appl. Surf Sci., 52, 45 (1991)Google Scholar
6 Chang, E.Y., Cibuzar, G.T., and Pande, K.P., IEEE Trans Electron Devices, ED‐35, 1412 (1988).Google Scholar
7 Reif, R., in Handbook of Plasma Processing Technology, Rossnagel, S.J., Cuomo, J.J., and Westwood, W.D., eds., Ch. 10 (Park Ridge, NJ, 1990).Google Scholar
8 Box, G.E.P., Hunter, W.G., and Hunter, J.S., Statistics for Experimenters, (John Wiley and Sons, New York, 1978) p. 385 Google Scholar
9 Lanford, W.A. and Rand, M.J., J. Appl. Phys., 49, 2473 (1978)Google Scholar
10 Claassen, W.A.P., Valkenburg, W.G.J.M, Wiggert, W.M.V.D., and Willemsen, F.C., Thin Solid Films, 129, 239 (1985).Google Scholar
11 Nguyen, V.S., in Handbook of Thin Film Deposition Processes and Techniques, Schuegraf, K.K., ed., Ch. 4 (Park Ridge, NJ, 1988).Google Scholar