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Optimization of Ga(In)NAs thin film growth by atomic hydrogen-assisted molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

Yukiko Shimizu ,
Naoya Miyashita  and
Yoshitaka Okada
Yukiko Shimizu
Affiliation:
bk981531@s.bk.tsukuba.ac.jp, Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan, +81-298-53-6902, +81-298-53-6902
Naoya Miyashita
Affiliation:
bk200101492@s.bk.tsukuba.ac.jp
Yoshitaka Okada
Affiliation:
okada@ims.tsukuba.ac.jp
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Abstract

The effect of growth temperature on the crystal quality and optical properties of Ga(In)NAs films was investigated over a range of 340 ∼ 520 °C. We found that Ga(In)NAs films fabricated at lower growth temperatures generally result in an improved crystal quality. An XRD linewidth of as low as 45 arcsec was obtained for a 1 µm-thick Ga0.94In0.06N0.01As0.99 thin film grown at 380 °C. This is ∼1/2 of that grown at the conventionally-adopted growth temperature of 480 °C. After annealing, an improved optical property represented by a higher PL intensity compared to the conventional growth method (annealed, Tgrowth = 480 °C) was also obtained in the 1 µm-thick Ga0.94In0.06N0.01As0.99 thin film grown at low temperature of 380 °C.

Keywords

III-Vmolecular beam epitaxy (MBE)x-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-32
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Kondow, M., Nakatsuka, S., Kitatani, T., Yazawa, Y., Okai, M., Jpn. J. Appl. Phys. 35, 5711 (1996).10.1143/JJAP.35.5711Google Scholar
2. Yamaguchi, , Physica E 14, 84 (2002).10.1016/S1386-9477(02)00362-4Google Scholar
3. Shimizu, Y., Kobayashi, N., Uedono, A., Okada, Y., J. Crystal Growth 278, 553 (2005).Google Scholar
4. Ohmae, A., Shimizu, Y., Okada, Y., Proceeding of 3rd World Conference on Photovoltaic Energy Conversion, Osaka (May 2003), 3P–B5.Google Scholar
5. Ohmae, A., Matsumoto, N., Okada, Y., J. Crystal Growth 251, 412 (2003).10.1016/S0022-0248(02)02331-XGoogle Scholar
6. Friedman, D. J., Geisz, J. F., Kurtz, S. R., Olson, J. M., J. Crystal Growth 195, 409 (1998).Google Scholar
7. Mintairov, A. M., Kosel, T. H., Merz, J. L., Blagnov, P. A., Vlasov, A. S., Ustinov, V. M., Cook, R. E., Phys. Rev. Lett. 87, 277401 (2001).Google Scholar
8. Chauveau, J. -M., Trampert, A., and Ploog, K. H., Tournié, E., Appl. Phys. Lett. 84, 2503 (2004).10.1063/1.1690108Google Scholar
9. Lutz, R. C., Specht, P., Zhao, R., Lam, O. H., Börner, F., Gebauer, J., Krause-Rehberg, R., Weber, E. R.. Phyica B 273–274, 722–724 (1999).Google Scholar