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Optimal Annealing Conditions of InGaAs Films for Selective Area Epitaxy of Quantum Dots by Indium Segregation
Published online by Cambridge University Press: 10 February 2011
Abstract
The surface of strained InGaAs films on GaAs for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. Various InxGa1-xAs films were annealed at temperatures between 400°C - 800°C. Significant indium desorption was found to occur at temperatures above 550°C.
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- Copyright © Materials Research Society 2003