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Optical Vibrational and Structural Properties of Ge1−xSn x alloys by UHV-CVD

Published online by Cambridge University Press:  21 March 2011

Jennifer Taraci ,
S. Zollner ,
M. R. McCartney ,
Jose Menendez ,
D. J. Smith ,
John Tolle ,
M. Bauer ,
Erika Duda ,
N. V. Edwards  and
J. Kouvetakis
Jennifer Taraci
Affiliation:
Department of Chemistry, Arizona State University, Tempe AZ 85287
S. Zollner
Affiliation:
Motorola Inc, Semiconductor Products Sector, 2200 W. Broadway Rd, Mesa AZ 85502
M. R. McCartney
Affiliation:
Center for Solid State Science, Arizona State University, Tempe AZ 85287
Jose Menendez
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287
D. J. Smith
Affiliation:
Center for Solid State Science, Arizona State University, Tempe AZ 85287 Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287
John Tolle
Affiliation:
Department of Chemistry, Arizona State University, Tempe AZ 85287
M. Bauer
Affiliation:
Department of Chemistry, Arizona State University, Tempe AZ 85287
Erika Duda
Affiliation:
Motorola Inc, Semiconductor Products Sector, 2200 W. Broadway Rd, Mesa AZ 85502
N. V. Edwards
Affiliation:
Motorola Inc, Semiconductor Products Sector, 2200 W. Broadway Rd, Mesa AZ 85502
J. Kouvetakis
Affiliation:
Department of Chemistry, Arizona State University, Tempe AZ 85287
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Abstract

UHV-CVD growth based on a deuterium stabilized Sn hydride and digermane produces Ge-Sn alloys with tunable bandgaps. The Ge1−xSnx (x=2–20 at.%) alloys are deposited on Si (100) and exhibit superior crystallinity and thermal stability compared with MBE grown films. Composition, crystal and electronic structure, and optical and vibrational properties are characterized by RBS, low energy SIMS, high resolution electron microscopy TEM, x-ray diffraction, as well as Raman and IR spectroscopies. TEM studies reveal epitaxial films with lattice constants between those of Ge and Sn. X-ray diffraction shows well-defined (004) peaks and rocking curves indicate a tightly aligned spread of the crystal mosaics. Resonance Raman indicate a E1 bandgap reduction relative to Ge, consistent with a decrease of the E2 critical point observed in spectroscopic ellipsometry. IR transmission spectra indicate an increase in absorption with increasing Sn content consistent with a decrease of the direct bandgap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H11.4.1
Copyright
Copyright © Materials Research Society 2002

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