Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-24T06:04:31.346Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Thermally Oxidized Silicon

Published online by Cambridge University Press:  22 February 2011

O.L. Russo ,
N.M. Ravindra ,
J.M. Grow  and
K.A. Dumas
O.L. Russo
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
N.M. Ravindra
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
J.M. Grow
Affiliation:
Department of Physics, New Jersey Institute of Technology, Newark, NJ 07102
K.A. Dumas
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
Get access

Abstract

The effect of furnace grown SiO2 layers on the optical properties of p- on p+ (100) Si substrates are investigated. The real part, n, of the complex refractive index n* = n + ik is calculated for radiation measured in the infra-red (IR) region between 3000 and 8000 cm−1 where the extinction coefficient, k, is negligible. The expression for n is obtained using the Fresnel coefficients for a three medium air-oxide-Si model. Strain in the silicon, which affects n, and caused by the stress in the SiO2 layer, increases with oxide thickness. X-ray diffraction (XRD) was used to measure the strain in Si for oxides layers ranging from native to 5124Å. The data showed a monotonically increasing normal compressive strain, εN (up to 0.47%) with oxide thickness, however, the corresponding change in n due to strain was not well defined. The effect of strain on the direct optical gap, Ed, at 3.46 eV when determined from results of other investigators by electroreflectance, suggests an average shift in Ed of about 25 meV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 319
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Schmidt, P.F. and Michel, W., J.Electrochem.Soc., 104, 230 (1957).Google Scholar
2. Ligenza, J.R., J.Appl.Phys., 36, 2703 (1965).CrossRefGoogle Scholar
3. Deal, B.E. and Grove, A.S., J.Appl.Phys., 36, 3770 (1965).CrossRefGoogle Scholar
4. Ligenza, J.R. and Spitzer, W.G., Phys.Chem.Solids, 14, 131 (1960).Google Scholar
5. Grove, A.S., Physics and Technology of Semiconductor Devices,(John Wiley and Sons, 1967), p.23.Google Scholar
6. Jaccodine, R.J. and Schlegel, W.A., J.Appl.Phys. 37, 2429 (1966).Google Scholar
7. Borden, P.G., Appl.Phys.Lett., 36, 829 (1980).CrossRefGoogle Scholar
8. Gray, Dwight E., cóordin. edit., American Institute of Phys. Handbook, 2nd Ed., (McGraw Hill, 1963), p.4–74.Google Scholar
9. Nisse, E.P. Eer, Appl.Phys.Lett., 30, 290 (1977).Google Scholar
10. Nisse, E.P. Eer, Appl.Phys.Lett., 35, 8 (1979).Google Scholar
11. Markham, J.R., Kinsella, K., Carangelo, R.M., Brouilette, C.R., Carangelo, M.D., Best, P.E. and Solomon, P.R., Rev. Scient. Instr., 64(9), 2515, Sept.1993.Google Scholar
12. DeWitt, D.P. and Incropera, F.P., Theory and Practice of Radiation Thermometry, DeWitt, D.P. and Nutter, Gene D., eds., (John Wiley and Sons, 1988) p.69.Google Scholar
13. Speriosu, V.S. and Vreeland, T. Jr, J.Appl.Phys., 56, 1591 (1984); C.R. Wie, T.Vreeland Jr.,and T.A. Tombrello, Mat.Res. Symp. Proc. Vol.35, p.305, (1985).Google Scholar
14. Dumas, K.A., Lowry, L. and Russo, O.L., Proc.IEEE Photovoltaic Specialists Conference, 19, 654 (1987).Google Scholar
15. Whelan, M.V., Goemans, A.H. and Goossens, L.M.C., Appl.Phys.Lett., 10, 262 (1967).Google Scholar
16. Cardona, M., Solid State Phys., Suppl. 11,ed. by Seitz, F., Turnbull, D. and Ehrenreich, H. (Academic, New York, 1969).Google Scholar