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Optical Properties of the Pb Center at the Si/SiO2 Interface

Published online by Cambridge University Press:  28 February 2011

Arthur H. Edwards  and
W. Beall Fowler
Arthur H. Edwards
Affiliation:
U. S. Army ERADCOM E. T. & D. Laboratory, Electronic Materials Research Division, Ft. Monmouth, NJ 07703
W. Beall Fowler
Affiliation:
Physics Department and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, PA 18015
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Abstract

We present theoretical results for the optical prooerties of the Pb center at the Si/SiO2 interface. Using wave functions obtainec from semiempirical (MINDO/3) cluster calculations, we have calculated electric dipole matrix elements connecting the singly occupied (neutral) defect state to the unoccupied conduction-band-like states, as well as those connecting the occupied valence-band-like states to the singly occupied defect state and to the unoccupied defect state. We predict the absorption cross section for excitation from the valence band to the unoccupied state to be of order 10−19 cm2 and that for excitation from the valence band to the occupied state and from the occupied state to the conduction band to be an order of magnitude larger. We also predict that the absorption will in some cases be strongly dependent on the direction of the polarization. Effects of symmetry lowering in the oxide and of distortions in the silicon are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 533
Copyright
Copyright © Materials Research Society 1985

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