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Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation

  • C. W. White (a1), S. P. Withrow (a1), A. Meldrum (a1), J. D. Budai (a1), D. M. Hembree (a2), J. G. Zhu (a3), D. O. Henderson (a4) and S. Prawerttt (a5)...

Abstract

Si nanocrystals formed in SiO2 by high-dose ion implantation and annealing give rise to strong optical absorption and intense photoluminescence (PL). The dose dependence of optical absorption provides evidence for size-dependent quantum confinement in the Si nanocrystals. PL peak energies are nearly independent of dose suggesting that surface or interface states play an important role in PL. Estimates of absorption bandgaps in the nanocrystals are given.

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Optical Properties Of Si Nanocrystals Formed In Si02 By Ion Implantation

  • C. W. White (a1), S. P. Withrow (a1), A. Meldrum (a1), J. D. Budai (a1), D. M. Hembree (a2), J. G. Zhu (a3), D. O. Henderson (a4) and S. Prawerttt (a5)...

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