Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T22:27:36.181Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Si Nanoclusters with Passivated Surfaces

Published online by Cambridge University Press:  10 February 2011

L. N. Dinh ,
L. L. Chase ,
M. Balooch ,
W. J. Siekhaus  and
F. Wooten
L. N. Dinh
Affiliation:
Department of Applied Science, University of California, Davis, CA. Chemistry and Material Science Department, Lawrence Livermore National Laboratory, CA.
L. L. Chase
Affiliation:
Chemistry and Material Science Department, Lawrence Livermore National Laboratory, CA.
M. Balooch
Affiliation:
Chemistry and Material Science Department, Lawrence Livermore National Laboratory, CA.
W. J. Siekhaus
Affiliation:
Chemistry and Material Science Department, Lawrence Livermore National Laboratory, CA.
F. Wooten
Affiliation:
Department of Applied Science, University of California, Davis, CA.
Get access

Abstract

Si nanoclusters with average size of a few nanometers have been synthesized by thermal vaporization of Si in an Ar buffer gas, and passivated with oxygen or atomic hydrogen. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) revealed that these nanoclusters were crystalline. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. Absorption mainly in the Si cores was observed by photoluminescence excitation (PLE) spectroscopy. The visible components of PL spectra were noted to blue shift and broaden as the size of the Si nanocrystals (nc-Si) was reduced, and there were differences in PL spectra for hydrogen and oxygen passivated nc-Si. Our data can be explained best by a model involving absorption between quantum confined states in the Si cores and emission by surface/interface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 431: Symposium P – Microporous and Macroporous Materials , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Canhain, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2 Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A., and Nakagiri, T., Appl. Phys. Lett. 56, 379 (1990).Google Scholar
3 Morisaki, H., Hashimoto, H., Ping, F. W., Nozawa, H., and Ono, H., Appl. Phys. Lett. 74, 2977 (1993).Google Scholar
4 Qi, Zhang, Bayliss, S. C., and Hutt, D. A., Appl. Phys. Lett. 66, 1977 (1995).Google Scholar
5 Prokes, S. M., and Glembocki, O. J., Mater. Chem. and Phys. 35, 1 (1993).Google Scholar
6 Kanemitsu, Y., Ogawa, T., Shiraishi, K., and Takeda, K., Phys. Rev. B 48, 4883 (1993).Google Scholar
7 Prokes, S. M. and Carlos, W. E., Appl. Phys. Lett. 78, 2671 (1995).Google Scholar
8 Schuppler, S., Friedman, S. L., Marcus, M. A., Adler, D. L., Xie, Y. H., Ross, F. M., Chabal, Y. J., Harris, T. D., Brus, L. E., Brown, W. L., Chaban, E. E., Szajowski, P. F., Christman, S. B., and Citrin, P. H., Phys. Rev. B 52, 4910 (1995).Google Scholar
9 Koch, F., Petrova-Koch, V., and Muschik, T., J. lumi. 57, 271 (1993).Google Scholar
10 Tsybeskov, L., Vandyshev, J. V., and Fauchet, P. M., Phys. Rev. B 49, 7821 (1994).Google Scholar
11 Yamada, M., Takazawa, A., and Tamura, T., Jpn. J. Appl. Phys. 31, L1451 (1992).Google Scholar
12 Cullity, B. D., X-ray diffraction (Addison-Wesley, Reading, Massachusetts, 1956), pp. 262.Google Scholar
13 Banyai, L. and Koch, S. W., Semiconductor Quantum Dots (World Scientific, Singapore, 1993), pp. 23–29.Google Scholar