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The Optical Properties of Nitrogen Implanied Allminum Nitride Films

  • Takanobu Fujihana (a1), Kenzo Kobayashi (a2), Susumu Namba (a2), Yisheng Dai (a3) and Masaya Iwaki (a3)...

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Effects of N-implantation on the composition depth profile, the chemical bonds and the optical transmittance of AlNx films have been investigated by means of Auger Electron Spectroscopy (AES), Fourier Transform Infrared (FT-IR) spectroscopy and visible transmission spectroscopy. AINx films were deposited on silicon (111) and commercial glass by an Activated Reactive Eyaporation (ARE) technique near room temperature. The 40 and 80 keV N+ -implantations were carried out at room temperature with doses ranging from 5×1016 to 5×1017 ions/cm2. The result of AES measurements revealed that the as-deposited AlNx film on Si consists of the AIN layer near the topsurface and the Al-rich layer near the interface. The concentration of nitrogen in the films increases as the N-dose increases up to 1×1017 ions/cm2. The N-implantation at a dose of 5×1017 ion/cm2 causes the interface between the film and the Si substrate to mix rather than increase the nitrogen concentration in the film. This higher dose implantation makes the FT-IR absorption peak corresponding to Al-N bonding become clear, and it makes the optical transmittance at a wavelength of 4400 Å go from 7% for as-deposited AINx film up to 70–90%. It is concluded that N-implantation into AlNx films causes the formation of AIN with a stoichiometric ratio to improve optical properties of the film.

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1) Koshinaka, M., Fujii, H., Nakanishi, K. and Shibuya, Y., Proc. of ISIAT'87, 361 (1987).
2) Fathimulla, A. and Lakhani, A., J. Appl. Phys. 54, 4586 (1983).
3) Satou, M., Fukui, S. and Fujimoto, F., Proc. of ISIAT'81, 349 (1981).
4) Ohira, S. and Iwaki, M., Nucl. Instrum. and Methods in Phy. Res. B21, 588 (1987).

The Optical Properties of Nitrogen Implanied Allminum Nitride Films

  • Takanobu Fujihana (a1), Kenzo Kobayashi (a2), Susumu Namba (a2), Yisheng Dai (a3) and Masaya Iwaki (a3)...

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