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Optical Properties of Nanocrystalline Silicon Films with Different Deposition Temperatures

  • A. M. Ali (a1), T. Inokuma (a1), Y. Kurata (a1) and S. Hasegawa (a1)

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Nanocrystalline silicon (nc-Si) films were deposited on fused quartz and single (100) crystal Si substrates by plasma-enhanced chemical vapor deposition from a SiH4-H2 mixture at various deposition temperatures, T δ. The effects of plasma-assisted hydrogenation at 300°C on the optical and structural properties were examined for the nc-Si films. The film deposited at T δ = 730°C exhibits photoluminescence (PL) in its as-deposited state, but the intensity of PL decreases after hydrogenation. We find that a correlation between the PL intensity and infrared absorption bands at around 850 and 1000 cm−1.

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Optical Properties of Nanocrystalline Silicon Films with Different Deposition Temperatures

  • A. M. Ali (a1), T. Inokuma (a1), Y. Kurata (a1) and S. Hasegawa (a1)

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