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Optical properties of Microcrystalline Silicon determined by Spectroscopic Ellipsometry and Photothermal Deflection Spectroscopy

  • Kyung Hoon Jun (a1), Helmut Stiebig (a2) and Reinhard Carius (a2)

Abstract

The effect of the microstructure and bonded hydrogen on the optical properties of microcrystalline films (μc-Si:H) was investigated by Spectroscopic Ellipsometry (SE) and Photothermal Deflection Spectroscopy (PDS). On samples with a high crystalline volume fraction we studied the reason for a large deviation of absorption coefficient in the energy range between 1.6 eV and 3.2 eV from the value predicted by effective medium theory. This enhancement can be attributed to scattering by the inhomogeneity of μc-Si:H, which is investigated by the introduction of the dense medium radiative transfer formalism to an optical scattering simulation. Further, we suggest strain as a reason for the enhanced absorption in highly crystalline μc-Si:H.

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Optical properties of Microcrystalline Silicon determined by Spectroscopic Ellipsometry and Photothermal Deflection Spectroscopy

  • Kyung Hoon Jun (a1), Helmut Stiebig (a2) and Reinhard Carius (a2)

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