Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-24T19:26:00.973Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Laser Induced Heavily Doped Silicon Layers

Published online by Cambridge University Press:  22 February 2011

A. Slaoui ,
E. Fogarassy ,
P. Siffert ,
J.F. Morhange  and
M. Balkanski
A. Slaoui
Affiliation:
Centre De Recherches Nucleaires, Laboratoire Phase, F–67037 Strasbourg Cedex
E. Fogarassy
Affiliation:
Centre De Recherches Nucleaires, Laboratoire Phase, F–67037 Strasbourg Cedex
P. Siffert
Affiliation:
Centre De Recherches Nucleaires, Laboratoire Phase, F–67037 Strasbourg Cedex
J.F. Morhange
Affiliation:
Universite Pierre Et Marie Curie, Laboratoire de Physique des Solides, F–75230 Paris Cedex
M. Balkanski
Affiliation:
Universite Pierre Et Marie Curie, Laboratoire de Physique des Solides, F–75230 Paris Cedex
Get access

Abstract

The goal of this paper is to investigate optical properties of heavily doped silicon, performed by laser annealing of implanted layers.

The optical properties were investigated by using U.V. and visible light (between 200 and 500 nm)reflectance and Raman spectrometry measurements. The experimental observations have been correlated with the contribution of the supersaturated solid solution of arsenic in the silicon lattice. Furthermore,the absorption coefficent of these layers has been deduced from ellipsometry measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 159
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Shtyrkov, G.I., Khibullin, I.B.,Galyatudinov, M.F. and Bayazitov, R.M.Sov.Phys. Semicond. 9 (1975) 1309Google Scholar
2.Leitola, A. and Gibbons, J.F.Appl. Phys. Lett. 35 (1979) 532Google Scholar
3.Natsuaki, N,Tamura, M. and Tokuyamat, T. J.Appl. Phys. 51 (1980) 3373Google Scholar
4.Mcgill, T.C.,Kurtin, S.L. and Shifrin, G.A.J. Appl. Phys. 14 (1970) 246Google Scholar
5.Ostoja, P.,Solmi, S.,Zani, A.J. Appl. Phys. 52 (1981) 6208Google Scholar
6.Slaoui, A.,Fogarassy, E.,Muller, J.C.,and Siffert, P., “Laser solid interactions and transient thermal processing of materials.” J. de Physique (1983) C–65Google Scholar
7.Fogarassy, E.,Stuck, R.Grob, A. and Siffert, P.Laser and electron beam processing of materials (White, C.W. and Peercy, P.S. ed) Academic Press (1980) p.177Google Scholar
8.Masetti, G.,Severi, M. and Solmi, S.IEEE trans. Elec. Dev. vol ED 30(1983) 764Google Scholar
9.Hill, C., Laser annealing of semiconductors (ed. Poate, J.M. and Mayer, J.W) Academic Press new York (1982) p.511Google Scholar
10.Howarth, L.E. and Gilbert, J.F.J. Appl. Phys. 34 (1983) 236Google Scholar
11.Greenaway, D.L. and Harbeke, G. Optical properties and band structure of semiconductors (Ed. Pamplin, B.R.) Pergamon Press (1968)Google Scholar
12.Motooka, T.,Miyao, M and Tokuyama, T. Extended Abstracts J. Electrochem.Soc. Montreal (1982)Google Scholar
13.Kane, E.O.Phys. Rev. 131 (1963) 790Google Scholar
14.Bonch–Bruyevitch, V.L.Soy. Phys. Sol. State 4 (1963) 1953Google Scholar
15.Morgan, T.N.Phys. Rev. A139 (1965) 343Google Scholar
16.Watanabe, K.,Motooka, T. and Tokuyama, T.Appl. Phys. Lett. 36 (1980) 451Google Scholar
17.Nakamura, K.,Kamoshida, M.,Vehara, A. and Tatsumi, R.ATP Proceedings n° 50 on laser interaction and laser processing materials research society meeting. (Ed. Ferris, F.D.Leamy, M.J. and Poate, J.M.) Boston (1979) p. 434Google Scholar
18.Kanellis, G.,Morhange, J.F.Balkanski, M.Phys. rev. B21(1980)1943Google Scholar
19.Jovanne, M.,Beserman, M.,Ipatoua, I. and Subshiev, A.Sol. State Com. 16 (1979) 1047Google Scholar
20.Chandraskhar, M.,Renucci, J.B.,Cardona, M.Phys. Rev. B17 (1978) 1623Google Scholar
21.Compaan, A.,Contreras, G.,Cardona, M. and Axmann, A. ref. 6 p. 197Google Scholar