Skip to main content Accessibility help
×
Home

OPTICAL PROPERTIES OF Ge NANOWIRES GROWN ON SILICON (100) AND (111) SUBSTRATES

  • V. Sharma (a1), B. V. Kamenev (a1), L. Tsybeskov (a1) and T. I. Kamins (a2)

Abstract

In this paper, we report Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations. Ge NWs grown are ∼40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ∼300 cm−1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW – Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the <111> preferential growth direction of Ge NWs.

Copyright

References

Hide All
1. Ruecks, T., Kim, K., Joselevich, E., Tseng, G. Y., Cheung, C., Lieber, C. M., Science 289, 94 (2000).
2. Huang, M. H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R., Yang, P., Science 292, 1897 (2001).
3. Morales, A. M., Lieber, C. M., Science 279, 208 (1998).
4. Yu, J., Chung, S., Heath, J. R., J. Phys. Chem. B 104, 11864 (2000).
5. Holmes, J. D., Johnston, K. P., Doty, R. C., Korgel, B. A., Science 287, 1471 (2000).
6. Shi, W. S., Peng, H. Y., Zheng, Y. F., Wang, N., Shang, N. G., Pan, Z. W., Lee, C. S., Lee, S. T., Adv. Mater. 12, 1343 (2000).
7. Kamins, T. I., Stanley Williams, R., Basile, D. P., Hesjedal, T., and Harris, J. S., J. Appl. Phys. 89, 1008 (2001).
8. Wu, Y., Yan, H., and Yang, P., Chemistry, Euro. J. 8, 1260 (2002).
9. Wu, Y., Yan, H., and Yang, P., Topics in Catalysis 19, 197 (2002).
10. Qi, J., White, J. M., Belcher, A. M., Masumoto, Y., Chemical Physics Letters 372, 763 (2003).
11. Kamins, T. I., Li, X., Stanley Williams, R., and Liu, X., Nano Letters 4, 503 (2004).
12. Grom, G.F., Lockwood, D.J., McCaffrey, J.P., Labbe, H.J., Fauchet, P.M., White, B. Jr, Diener, J., Kovalev, D., Koch, F., Tsybeskov, L., Nature 407, 358 (2000).
13. Yu, P. Y., Cardona, M., Fundamentals of Semiconductors: Physics and Materials Properties, Springer-Verlag, New York, 2001, pp. 617.
14. Sui, Z., Burke, H. H., Herman, I. P., Phys. Rev. B 48, 2162 (1993).
15. Davies, G., Phys. Rep. 176, 83 (1989).
16. Weber, J., Alonso, M. I., Phys. Rev. B 40, 5683 (1989).
17. Thurmond, C. D., J. Electrochem. Soc., 122, 1133 (1975).
18. Kamenev, B. V., Tsybeskov, L., Baribeau, J.-M., Lockwood, D. J., Appl. Phys. Lett. 84, 1293 (2004).
19. Füller, T., Konuma, M., Zipprich, J., and Banhart, F., Appl. Phys. A 69, 597 (1999).

Related content

Powered by UNSILO

OPTICAL PROPERTIES OF Ge NANOWIRES GROWN ON SILICON (100) AND (111) SUBSTRATES

  • V. Sharma (a1), B. V. Kamenev (a1), L. Tsybeskov (a1) and T. I. Kamins (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.