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Optical Properties and New Functionality of Nanocrystalline CuCl and Ge

Published online by Cambridge University Press:  28 February 2011

Yasuaki Masumoto*
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Abstract

Lasing of nanocrystalline CuCl embedded in a NaCl single crystal wasobserved for the first time. Lasing takes place at 77 K in nanocrystalline CuCl sandwiched between dielectric mirrors under the pulsed ultraviolet laser excitation. The lasing transition is that from bi-exciton to exciton. The lasing is observed up to 108 K. The optical gain of nanocrystalline CuCl is almost the same as that of bulk crystals in spite of the low concentration of CuCl in the NaCl matrix.

The origin of visible photoluminescence of nanocrystalline Ge in SiO2 glassy matrix has been studied. Spectroscopic analyses of nanocrystalline Ge indicate that the room-temperature photoluminescence comes from nanocrystalline Ge of diameter of 4 nm or less. High-resolution electron microscopic studies imply that the structure of nanocrystalline Ge of diameter ≤ 4 nm differs from the diamond structure. These data suggest that new nanostructure crystalline Ge having a character of direct optical transition exhibits the visible photoluminescence.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

1. Weisbuch, C. and Nagle, J., in Science and Engineering of One- and Zero- Dimensional Semiconductors, Plenum, New York, 1990, p. 309.Google Scholar
2. Arakawa, Y. and Sakaki, H., Appl. Phys. Lett. 40, 939 (1982).Google Scholar
3. Asada, M., Miyamoto, Y. and Suematsu, Y., IEEE J. Quant. Electron. QE-22, 1915 (1986).Google Scholar
4. Ekimov, A. I., Efros, Al. L. and Onushchenko, A. A., Solid State Commun. 56, 921 (1985).Google Scholar
5. Ueta, M., Kanzaki, H., Kobayashi, M., Toyozawa, Y. and Hanamura, E., Excitonic Processes in Solids, (Springer, Berlin, 1986), Chap. 3.Google Scholar
6. Itoh, T., Jin, F., Iwabuchi, Y. and Ikehara, T., in Nonlinear Optics of Organics and Semiconductors, ed. by Kobayashi, T., Springer, Berlin, 1989, p. 76.Google Scholar
7. Shaklee, K.L., Leheny, R.F. and Nahory, R.E., Phys. Rev. Lett. 26, 888 (1971).Google Scholar
8. Ojima, M., Oka, Y., Kushida, T. and Shionoya, S., Solid State Commun. 24, 845 (1977).Google Scholar
9. Weinberger, D. A., Peyghambarian, N., Rushford, M. C. and Gibbs, H. M., Proc. of 1984 nnual Meeting of Optical Society of America, San Diego, 1984, p. 31.Google Scholar
10. Itoh, T., Iwabuchi, Y. and Kataoka, M., Phys. Status solidi (b) 145, 567 (1988).Google Scholar
11. Kayanuma, Y. and Kuroda, K., Appl. Phys. A53, 475 (1991).Google Scholar
12. Shimoda, K., Introduction to Laser Physics, (Springer, Berlin, 1986).Google Scholar
13. Kaminskii, A.A., Laser Crystals, (Springer, Berlin, 1981), Chap. 6.Google Scholar
14. Takagahara, T., Phys. Rev. B39, 10206 (1989).Google Scholar
15. Wamura, T., Masumoto, Y. and Kawamura, T., Appl. Phys. Lett. 59, 1758 (1991).Google Scholar
16. See, for example, Brus, L., IEEE J. Quantum Electron. QE-22, 1909 (1986); Appl. Phys. A53, 465 (1991) and references therein.Google Scholar
17. See, for example, Hanamura, E., Phys. Rev. B38, 1288 (1988);Google Scholar
Kayanuma, Y., Phys. Rev. B38, 9772 (1988) and references therein.Google Scholar
18. Furukawa, S. and Miyasato, T., Phys. Rev. B38, 5726 (1988).Google Scholar
19. Collis, A.G. and Canham, L.T., Nature, 353, 335 (1991).Google Scholar
20. Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y., and Masumoto, Y., Appl. Phys. Lett. 59, 3168 (1991).Google Scholar
21. See, for example, Abstract book of Fall Meeting of the Materials Research Society, Symposium AA (Boston, Dec. 1991); Symposium on Luminescence from Indirect Semiconductors, the 1992 March Meeting of the American Physical Society (Indianapolis, March, 1992).Google Scholar
22. See, for example, Tsunetomo, K., Kawabuchi, A., Kitayama, H., Osaka, Y., and Nasu, H., Jpn. J. Appl. Phys. 29, 2481 (1990).Google Scholar
23. Jeffries, C.D., Science 189, 955 (1975) and references therein.Google Scholar
24. Takagahara, T. and Takeda, K., To be published in Phys. Rev. B 46, (1992).Google Scholar
25. Rossetti, R., Hull, R., Gibgon, J.M., and Brus, L.E., J. Chem. Phys. 83, 1409 (1985);Google Scholar
Wang, Y., Suna, A., Mahler, W., and Kasowski, R., J. Chem. Phys. 87, 7315 (1987).Google Scholar
26. Saito, Y., J. Cryst. Growth 47, 61 (1979).Google Scholar
27. Hayashi, S. and Abe, H., Jpn. J. Appl. Phys. 23, L824 (1984).Google Scholar