Skip to main content Accessibility help
×
Home

Optical Investigations of InAs Growth on GaAs and Lasing in Singly and Multiply Stacked Island Quantum Boxes

  • A. Kalburge (a1), T. R. Ramachandran (a1), R. Heitz (a1), Q. Xie (a1), P. Chen (a1) and A. Madhukar (a1)...

Abstract

We report on the optical investigations of InAs growth on GaAs. In-situ STM/AFM studies show the presence of features 2-4 ML high, which we call quasi-3D (Q3D) clusters, well in advance of 3D island formation. Though the photoluminescence (PL) emission from these Q3D clusters is in the same wavelength regime as that from well developed 3D islands, they show characteristic differences in the PL excitation spectra and temperature dependence of PL, distinguishing them clearly from the 3D islands. Finally, we discuss the lasing observed from lasers containing single and five sets of InAs layers grown with conditions in which the in-situ STM/AFM studies show only 3D islands.

Copyright

References

Hide All
1 Guha, S., Madhukar, A., and Rajkumar, K. C., Appl.Phys.Lett., 57, 2110 (1990).
2 Leonard, D., Ond, K., and Petroff, P. M., Phys. Rev., B 50, 11687 (1994).
3 Gerard, J. M., et al, J.Cryst.Growth., 150, 351 (1995).
4 Xie, Q., et al, J. Crsyt. Growth, 150, 357 (1995).
5 Polimeni, A., et al, Phys. Rev. B 53, R4213 (1996).
6 Bimberg, D., et al, Jpn. J. Appl. Phys., 35, 1311 (1996).
7 Ramachandran, T. R., et al, J. Cryst. Growth (to be published).
8 Grundmann, M., et al, Phys.Rev.Ltt., 74, 4043 (1995).
9 Arakawa, Y., and Sakaki, H., Appl.Phys.Lett., 40, 939 (1982).
10 Kirstaedter, N., et al, Electron. Lett., 30, 1416 (1994).
11 Shoji, H., et al, IEEE Photon. Technol. Lett., 12, 1385 (1995).
12 Shoji, H., et al, Jpn. J. Appl. Phys. 35, L903 (1996).
13 Xie, Q., étal, IEEE Photon. Technol. Lett., 8, 965 (1996).
14 Schmidt, O., étal, Electron. Lett., 32, 1302 (1996).
15 Kirstaedter, N., etal, , Appl.Phys.Lett., 69, 1226 (1996).
16 Kamath, K., et al, Electron. Lett., 32, 1374 (1996); R. Mirin, et al, Electron. Lett., 32, 1732 (1996).
17 Kobayashi, N.P.et al, Appl.Phys.Lett., 68, 3299 (1996).
18 Ramachandran, T.R., et al, Appl. Phys. Lett, (to be published).
19 Heitz, R., etal,, Appl.Phys.Lett., 68, 361 (1996).
20 Xie, Q., etal, Phys.Rev.Lett., 75, 2542 (1995).
21 Asryan, L. V., and Suris, R. A., Semicond.Sci.Technol., 11, 554 (1996).

Optical Investigations of InAs Growth on GaAs and Lasing in Singly and Multiply Stacked Island Quantum Boxes

  • A. Kalburge (a1), T. R. Ramachandran (a1), R. Heitz (a1), Q. Xie (a1), P. Chen (a1) and A. Madhukar (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed