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Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

Published online by Cambridge University Press:  10 February 2011

Takeshi Uenoyama
Takeshi Uenoyama*
Affiliation:
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-4 Hikaridai, Seikacho, Sourakugun, Kyoto 619-0237, Japan, Fax: +81-774-98-2586/Tel: +81-774-98-251 1/E-mail: takeshi@crl.mei.co.jp
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Extract

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G2.9
Copyright
Copyright © Materials Research Society 1999

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References

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