Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-03T23:56:28.910Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical evaluation of pretreated InGaN quantum well structures

Published online by Cambridge University Press:  01 February 2011

T. Böttcher ,
F. Bertram ,
P. Bergman ,
A. Ueta ,
J. Christen  and
D. Hommel
T. Böttcher
Affiliation:
Universität Bremen, PO Box 330440, 28334 Bremen, Germany
F. Bertram
Affiliation:
Universität Magdeburg, PO Box 4120, 39016 Magdeburg, Germany
P. Bergman
Affiliation:
Linköping Universitet, SE-581 83 Linköping, Sweden
A. Ueta
Affiliation:
Universität Bremen, PO Box 330440, 28334 Bremen, Germany
J. Christen
Affiliation:
Universität Magdeburg, PO Box 4120, 39016 Magdeburg, Germany
D. Hommel
Affiliation:
Universität Bremen, PO Box 330440, 28334 Bremen, Germany
Get access

Abstract

In order to optimize the quantum efficiency of InGaN quantum wells, different MOVPE growth sequences are compared using photo- and electroluminescence. In one study, the surface was pretreated with trimethylindium (TMIn) prior to the well deposition. In another study, growth interruptions were performed after the quantum well deposition to desorb segregated indium. In both cases, the room-temperature photoluminescence (PL) intensity is strongly enhanced. For the samples grown with TMIn preflow the wavelength distribution in low-temperature cathodoluminescence (CL) wavelength mappings is narrowed, which can be attributed to more homogeneous quantum wells. Furthermore, the decay times of the radiative recombination increase both at RT and 2K. A reason for this could be an improved indium profile along the growth direction or a more homogeneous In wetting layer due to the pre-wetted surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.59
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Zhang, J.. Hao, M., Li, P., and Chua, S.J., Appl. Phys. Lett. 80, 485 (2002).Google Scholar
[2] Moon, Y.T., Kim, D.J., Song, K.M., Choi, C.L., Han, S.H., Seong, T.Y., and Park, S.J., Appl. Phys. Lett. 89, 6514 (2001).Google Scholar
[3] Figge, S., Böttcher, T., Einfeldt, S., and Hommel, D., J. Cryst. Growth 221, 262 (2000).Google Scholar
[4] Christen, J., Grundmann, M. and Bimberg, D., J. Vac. Sci. Technol. B 9, 2358 (1991).Google Scholar
[5] Keller, S., Chichibu, S.F., Minsky, M.S., Hu, E., Mishra, U.K., and DenBaars, S.P., J. Cryst. Growth 195, 258 (1998).Google Scholar
[6] Chichibu, S.F., Abare, A.C., Mack, M.P., Minsky, M.S., Deguchi, T., Cohen, D., Kozodoy, P., Fleischer, S.B., Keller, S., Speck, J.S., Bowers, J.E., Hu, E., Mishra, U.K., Coldren, L.A., DenBaars, S.P., Wada, K., Sota, T., and Nakamura, S., Materials Science and Engineering B 59, 298 (1999).Google Scholar