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Optical devices based on anisotropically nanostructured silicon

  • J. Diener (a1), N. Künzner (a1), E. Gross (a1), D. Kovalev (a1) and M. Fujii (a2)...

Abstract

Anisotropic nanostructuring of bulk silicon (Si) leads to a significant optical anisotropy of single porous silicon (PSi) layers. A variation of the etching current in time allows a controlled modification of the porosity along the growth direction and therefore a three-dimensional variation of the refractive index (in plane an in depth). This technique can be important for photonic applications since it is the basis of a development of a variety of novel, polarization sensitive, silicon-based optical devices: retarders, dichroic Bragg Reflectors, dichroic microcavities and Si based polarizers.

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[1] Schilling, J., Müller, F., Matthias, S., Wehrspohn, R.B., Gösele, U., and Busch, K., Appl. Phys. Lett. 78, 1180 (2001)
[2] Cullis, A. G., Canham, L. T. and Calcott, P. D. J., J. Appl. Phys. 82, 909 (1997)
[3] Künzner, N., Kovalev, D., Diener, J., Gross, E., Yu. Timoshenko, V., Polisski, G., Koch, F. and Fujii, M. Optics Letters 26, 1265 (2001)
[4] Kovalev, D., Polisski, G., Diener, J., Heckler, H., Künzner, N., Yu. Timoshenko, V., Koch, F., Appl. Phys. Lett. 78, 916 (2001)
[5] Kovalev, D., Polisski, G., Diener, J., Heckler, H., Künzner, N., Koch, F. Phys. Stat. Sol. (a) 180, r8–r11 (2000)
[6] Diener, J., Künzner, N., Kovalev, D., Gross, E., Yu. Timoshenko, V., Polisski, G. and Koch, F., Appl. Phys. Lett. 78, 3887 (2001)
[7] Diener, J., Künzner, N., Kovalev, D., Gross, E., Koch, F., J. of Appl. Phys. 91, 6704 (2002)
[8] Diener, J., Künzner, N., Gross, E., Kovalev, D., Fujii, M., Optics Letters accepted for publication

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Optical devices based on anisotropically nanostructured silicon

  • J. Diener (a1), N. Künzner (a1), E. Gross (a1), D. Kovalev (a1) and M. Fujii (a2)...

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