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Optical Demultiplexer Device: Frequency and optical bias analysis

  • P. Louro (a1) (a2), M. Vieira (a1) (a2) (a3), M. A. Vieira (a1) (a2) and T. Silva (a1)

Abstract

In this paper we present results on the use of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. This device is useful in optical communications applications that use the wavelength division multiplexing technique to encode multiple signals into the same transmission medium. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photo generated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. A demux algorithm based on the voltage controlled sensitivity of the device was proposed and tested. The operation frequency of the device was analyzed under different optical bias conditions. An electrical model of the WDM device is presented and supported by the solution of the respective circuit equations.

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1. Bas, M., Fiber Optics Handbook, Fiber, Dev.and Syst. for Opt. Comm., Chap, 13, Mc Graw-Hill, 2002.
2. Vieira, M., Fernandes, M., Louro, P., Fantoni, A., Vygranenko, Y., Lavareda, G., Nunes de Carvalho, C., Mat. Res. Soc. Symp. Proc., Vol. 862 (2005) A13.4.10.1557/PROC-862-A13.4
3. Louro, P., Vieira, M., Vieira, M.A., Fernandes, M., Fantoni, A., Francisco, C., Barata, M., Physica E: Low-dimensional Systems and Nanostructures, 41 (2009) 10821085.10.1016/j.physe.2008.08.029
4. Louro, P., Vieira, M., Fernandes, M., Costa, J., Vieira, M. A., Caeiro, J., Neves, N., Barata, M., Phys. Status Solidi C 7, No. 3–4, 11881191 (2010).
5. Vieira, M. A., Vieira, M., Fernandes, M., Fantoni, A., Louro, P., and Barata, M., Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2009, MRS Proceedings Vo. 1153, A08–0.

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