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Optical Characterization of 100 eV C+ Ion Doped GaAs

Published online by Cambridge University Press:  22 February 2011

Tsutomu Iida ,
Yunosuke Makita ,
Shinji Kimura ,
Stefan Winter ,
Akimasa Yamada ,
Hajime Shibata ,
Akira Obara ,
Shigeru Niki ,
Paul Fons  and
Yushin Tsai
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Tsutomu Iida
Affiliation:
Agency of Industrial Science and Technology fellowship scientist and on leave from Universitat Konstanz, Fakultät Physik, W-7750 Konstanz, Germany
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Shinji Kimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Stefan Winter
Affiliation:
Agency of Industrial Science and Technology fellowship scientist and on leave from Universitat Konstanz, Fakultät Physik, W-7750 Konstanz, Germany
Akimasa Yamada
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Hajime Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Akira Obara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Shigeru Niki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Paul Fons
Affiliation:
Science and Technology Agency (STA) fellowship scientist and from April 1, 1993 at Electrotechnical laboratory
Yushin Tsai
Affiliation:
On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan
Shin-ichiro Uekusa
Affiliation:
Meiji University, 1-1-1 Higashi-Mita, Tama, Kawasaki 214, Japan
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Abstract

Low energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 357
Copyright
Copyright © Materials Research Society 1993

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References

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