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Optical Centers Related to Laser-Doped Erbium in Silicon

Published online by Cambridge University Press:  10 February 2011

K. Nakashima ,
O. Eryu ,
O. Iioka ,
H Minami  and
M. Watanabe
K. Nakashima
Affiliation:
E and C Department, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Japan, nakasima@elcom.nitech. ac.jp
O. Eryu
Affiliation:
E and C Department, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Japan, nakasima@elcom.nitech. ac.jp
O. Iioka
Affiliation:
E and C Department, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Japan, nakasima@elcom.nitech. ac.jp
H Minami
Affiliation:
E and C Department, Nagoya Institute of Technology, Showa-ku, Nagoya 466, Japan, nakasima@elcom.nitech. ac.jp
M. Watanabe
Affiliation:
Ion Engineering Research Institute Corporation, Tsuda, Hirakata, Osaka, Japan
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Abstract

Excimer laser irradiation has been applied to dope erbium ions in silicon. Er-doping is realized with both processes of the Er-diffusion in the melted region and the subsequent solid solidification. Er atoms at the maximum concentration of 1021 cm3 are doped in the region of 150 nm thickness without significant defect formation and amorphization. Stable Er-optical centers, emitting well known series of luminescence lines near 1.54 jim, are formed after short term heat treatments at a relatively low temperature. Optical centers are distributed in proportional to the total Er concentration in the doped region. Oxygen atoms are found to play critical roles for stabilizing Er-optical centers and for rearranging the surroundings of Er ions. Modified bonding states of O and Er other than those in SiO2 or Er2O3 are formed in the Er doped region during both doping and annealing processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 75
Copyright
Copyright © Materials Research Society 1996

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