Skip to main content Accessibility help

Optical and structural prorerties of InAs epilayer on graded InGaAs

  • Gu Hyun Kim (a1), Jung Bum Choi (a1), Joo In Lee (a2), Se-Kyung Kang (a2), Seung Il Ban (a2), Jin Soo Kim (a3), Jong Su Kim (a4), Sang Heon Lee (a5) and Jae-Young Leem (a6)...


We have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.


Corresponding author

Corresponding Author:


Hide All
1. Verdin, A., Gas Analysis Instrumentation (Wiley, New York, 1975).
2. Harbeke, G., Madelung, O., and Rossler, U., Landolt-Bornstein 17a, edited by Madelung, O. (Springer, Berlin, 1982).
3. Matveev, B., Zotova, N., Karandashov, S., Remennyi, M., II’inskaya, N., Stus, N., Shustov, V., Talalakin, G., and Malinen, J., IEE Proc.: Optoelectron. 145, 254 (1998).
4. Esina, N. P., Zotova, N. V., Markov, I. I., Matveev, B. A., Rogachev, A. A., Stus, N. M., and Talalakin, G. N., J. Appl. Spectrosc. 42, 465 (1985).
5. Parry, M. K., and Krier, A., Electron. Lett. 30, 1968 (1994).
6. Popov, A., Sherstnev, V., Yakovlev, Y., Civis, S., and Zelinger, Z., Spectrochim. Acta 6, 821 (1998).
7. Mao, Y. and Kreir, A., Infrared Phys. Technol. 38, 397(1997).
8. Popov, A., Sherstnev, V., Yakovlev, Yu, Baranov, A. N., and Alibert, C., Electron. Lett. 33, 86 (1997).
9. Houzay, F., Guille, C., Moison, J. M., Henoc, P., and Barthe, F., J. Cryst. Growth 81, 67 (1987).
10. Munekata, H., Chang, L. L., Woronick, S. C., and Kao, Y. H., J. Cryst. Growth 81, 237 (1987).
11. Grober, Robert D., Drew, H. D., Chyi, Jen-Inn, Kalem, S., and Morkoc, H., J. Appl. Phys. 65, 4079 (1989).
12. Krier, A., Gao, H. H., and Sherstnew, V. V., J. Appl. Phys. 85, 8419 (1999).
13. Feng, Z. M., Ma, K. Y., Cohen, R. M., and Stringfellow, G. B., Appl. Phys. Lett. 59, 1446(1991).
14. Lacrox, Y., Tran, C. A., Watkins, S. P., and Thewalt, M. L. W., Appl. Phys. Lett. 66, 1101(1995).
15. Baldereschi, A., and Lipari, N. C., Phys. Rev. B 3, 439(1971).
16. Lacrox, Y., Tran, C. A., Watkins, S. P., and Thewalt, M. L. W., J. Appl. Phys. 80, 6416 (1996).
17. Kruse, P. W., McGlauchlin, L. D., and McQuistan, R. B., Infrared Technology (John Wiley & Sons, New York., 1961).
18. Kim, G. H., Choi, J. B., Leem, J.-Y., Lee, J. I., Noh, S. K., Kim, Jong Su, Kim, J. S., Kang, S.-K., and Ban, S. I., J. Cryst. Growth 234, 110 (2001).
19. Lord, S. M., Pezeshki, B., Kim, S. D., and Harris, J. S., J. Cryst. Growth 127, 759 (1993).
20. Sacedon, A., Gonzalez-Sanz, F., Calleja, E., Munoz, E., Monlina, S. I., Pacheco, F. J., Araujo, D., Garcia, R., Lourenco, M., Yang, Z., Kidd, P., and Dunstan, E., Appl. Phys. Lett. 66, 3334 (1995.)
21. Kidd, P., Dunstan, D. J., Colson, H. G., Lourenco, M. A., Sacedon, A., Gonzalez-Sanz, F., Gonzalez, L., Gonzalez, Y., Garcia, R., Gonzalez, D., Pacheco, F. J., and Goodhew, P. J., J. Cryst. Growth 169, 649 (1996)
22. Bosacchi, A., Riccardis, A. C., Frigeri, P., Franchi, S., Ferrari, C., Gennari, S., Lazzrini, L., Nasi, L., Salviati, G., Drigo, A. V., and Romanato, F., J. Cryst. Growth 175/176, 1009 (1997)
23. Ferrari, C., Gennari, S., Franchi, S., Lazzrini, L., Natali, M., Romanato, F., Drigo, A. V., Baruchel, J., J. Cryst. Growth 205, 474 (1999)
24. JCPDS-International Center for Diffrection Data, v. 1.30 (1997)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed