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Optical and Structural Properties of CaF2:Nd Films on Si-Based Substrates

Published online by Cambridge University Press:  21 February 2011

C.-C. Cho ,
W.M. Duncan  and
H.-Y. Liu
C.-C. Cho
Affiliation:
Central Research Laboratories, Texas Instruments, P.O. Box 655936, MS 147, Dallas, Texas 75265
W.M. Duncan
Affiliation:
Central Research Laboratories, Texas Instruments, P.O. Box 655936, MS 147, Dallas, Texas 75265
H.-Y. Liu
Affiliation:
Central Research Laboratories, Texas Instruments, P.O. Box 655936, MS 147, Dallas, Texas 75265
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Abstract

By thermally evaporating CaF2 and NdF3, we have grown Nd-doped CaF2 films on Si(111), A1/Si(111) and quarter-wavelength Ta2O5/SiO2 multilayer Bragg reflectors. The optical and structural properties of the CaF2:Nd films are characterized by photoluminescence spectroscopy (PL) and x-ray diffraction. The effects of different Nd concentration, growth temperatures and post-annealing were studied. Regardless of the substrates, the as-grown films show emission lines at wavelengths similar to bulk CaF2:Nd. Annealing the films at 700°C in forming gas results in a new emission pattern. Little difference between the PL spectra of polycrystalline and single crystal CaF2:Nd films is observed, indicating that the luminescence efficiency is insensitive to the crystalline quality of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 325
Copyright
Copyright © Materials Research Society 1993

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References

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