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Optical and Microstructural Characterization of Nanocrystalline Silicon Superlattices

  • L. Tsybeskov (a1), G. F. Grom (a1), R. Krishnan (a1), P. M. Fauchet (a1), J. P. McCaffrey (a2), J.-M. Baribeau (a2), G. I. Sproule (a2), D. J. Lockwood (a2), V. Timoshenko (a3), J. Diener (a3), H. Heckler (a3), D. Kovalev (a3), F. Koch (a3) and T. N. Blanton (a4)...

Abstract

We present optical and microstructural characterization of nanocrystalline silicon superlattices (nc-Si SLs). Our samples have better than 5 % Si nanocrystal size distribution and a long range order along the direction of growth provided by periodically alternating layers of Si nanocrystals and SiO2. Flat and chemically abrupt nc-Si/SiO2 interfaces with a roughness of < 4Å are confirmed by transmission electron microscopy (TEM), Auger elemental microanalysis, X-ray small angle reflection, and low-frequency Raman scattering. Photoluminescence (PL) in our structures has been studied in details including time-resolved and steady-state PL spectroscopy in a wide range of temperature, excitation wavelength and power. Resonantly excited PL spectra show phonon steps proving that the PL originates in Si nanocrystals. Electrical measurements show signature of phonon-assisted tunneling proving low defect density nc-Si/SiO2 interface.

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Optical and Microstructural Characterization of Nanocrystalline Silicon Superlattices

  • L. Tsybeskov (a1), G. F. Grom (a1), R. Krishnan (a1), P. M. Fauchet (a1), J. P. McCaffrey (a2), J.-M. Baribeau (a2), G. I. Sproule (a2), D. J. Lockwood (a2), V. Timoshenko (a3), J. Diener (a3), H. Heckler (a3), D. Kovalev (a3), F. Koch (a3) and T. N. Blanton (a4)...

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