Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T17:57:37.808Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical and Luminescent Properties of Highly Oriented Nanocrystalline Gd2-xEuxO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

Segundo Jáuregui-Rosas ,
Oscar Perales-Pérez ,
S. P. Singh ,
M. S. Tomar ,
Wei-Ji Jia  and
Omar Vásquez
Segundo Jáuregui-Rosas
Affiliation:
segundorj@yahoo.es, U of Puerto Rico at Mayaguez, Physics, Mayaguez, Puerto Rico
Oscar Perales-Pérez
Affiliation:
ojuan@uprm.edu, U of Puerto Rico at Mayaguez, Engineering Science and Materials, Mayaguez, Puerto Rico
S. P. Singh
Affiliation:
singh@uprm.edu, U of Puerto Rico at Mayaguez, Engineering Science and Materials, Mayaguez, Mayaguez, Puerto Rico
M. S. Tomar
Affiliation:
mtomar@uprm.edu, U of Puerto Rico at Mayaguez, Physics, Mayaguez, Puerto Rico
Wei-Ji Jia
Affiliation:
wjia@uprm.edu, U of Puerto Rico at Mayaguez, Physics, Mayaguez, Puerto Rico
Omar Vásquez
Affiliation:
ovazquez@uprm.edu, U of Puerto Rico at Mayaguez, Physics, Mayaguez, Puerto Rico
Get access

Abstract

Highly crystalline and transparent Eu-doped Gd2O3 thin films were produced through a modified sol-gel method that did not require the use of any chelating agent. The effect of the atomic fraction of Eu3+ ions (‘x’ =0.05-0.30) on the structural, optical and luminescent properties has been studied. X-ray diffraction studies showed the preferential growth of Gd2-xEuxO3 thin films along the (400) plane corresponding to the cubic phase. UV-vis measurements revealed the high film transparency of the films in the visible region and a band gap value of 5.3eV. It has also been observed that the luminescence properties of the films were strongly dependent on both, the excitation wavelength and Eu concentration; the most efficient excitation conducive to red luminescence was achieved at the absorption band of Gd2O3 host (229nm). Under this condition all films exhibited strong red emission that is characteristic of Eu3+ ions. The emission intensity was also dependent on the doping level; the most intense luminescence was obtained at ‘x’=0.15. The drop in the luminescence intensity observed for ‘x’ values higher than 0.15 was attributed to quenching concentration effect.

Keywords

GdEuoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D04-11
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Boulesteix, C., in Gschneider, K.A. Jr. and Eyring, L. (Editors). Handbook on the Physics and Chemistry of Rare Earths, (1982) Vol. 5, Chap. 44, pp. 321–386. North-Holland Publishing Company, Amsterdam.Google Scholar
[2] Guo, H., et al., Appl. Surf. Sci. 230 (2004) 215–221 Google Scholar
[3] Dosev, D., et al., Appl. Phys. Lett. 88, 011906 (2006)Google Scholar
[4] Gordon, W.O., et al., J. Lumin. 108 (2004) 339–342 Google Scholar
[5] Tanaka, I., et al., Jpn. J. Appl. Phys. 43 (2004) 5302 Google Scholar
[6] Jeong, J. H., et al., Opt. Mater. 28 (2006) 693–697 Google Scholar
[7] Louis, C., et al., J. Solid State Chem., 173, (2003) 335–341 Google Scholar
[8] Liu, X., et al., Opt. Mater. (2008), doi: 10.1016/j.optmat.2008.02.001Google Scholar
[9] Jáuregui-Rosas, S., Perales-Perez, O., Jia, W., et al., Mater. Res. Symp. Proc. Vol. 1074, 1074–I10-41, (2008)Google Scholar
[10] Pang, M.L., et al., Opt. Mater. 23 (2003) 547–558.Google Scholar
[11] Moss, T.S., phys. stat. Sol. (b) 131 (1985) 415 Google Scholar
[12] Hoefdraad, H.E., J. Solid State Chem. 15 (1975) 175–177 Google Scholar
[13] Jáuregui-Rosas, S., Perales-Pérez, O., Jia, W., et al., NSTI-Nanotech Technical Proceedings, Vol. 1, 990–993, 2008.Google Scholar