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Optical and Electronic Properties of GaAs/AlAs Random Superlattices

Published online by Cambridge University Press:  22 February 2011

E.G. Wang ,
J.H. Xu ,
W.P. Su  and
C.S. Ting
E.G. Wang
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
J.H. Xu
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
W.P. Su
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204 Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
C.S. Ting
Affiliation:
Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX 77204
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Abstract

The optical and electronic properties of three-dimensional (3D) random GaAs/AlAs superlattices (SLs) has been studied by using a tight-binding Hamiltonian with secondneighbor interactions. We calculate three completely disordered sequences with the probability of GaAs layers being 30%, 50%, and 70%. The higher the GaAs composition, the narrower the indirect gap. An energy-level crossing is found at the bottom of conduction band, which originates from the M-state splitting induced by layer disorder. The localized states over two - four monolayers play an important role in the absorption edge of random SL. The highest absorption intensity of the band-edge transitions in our random models is about eight times stronger than that of short period ordered GaAs/AlAs SL. Our results are in good agreement with some recent photoluminescence measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 481
Copyright
Copyright © Materials Research Society 1994

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