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Optical and Cyclotron Resonance Investigations on GaInP/GaAs Epitaxial Layers

  • P. Emanuelsson (a1), M. Drechsler (a1), D. M. Hofmann (a1), B. K. Meyer (a1), M. Moser (a2) and F. Scholz (a2)...

Abstract

Ga0.5In0.5P has been investigated using optically detected cyclotron resonance and photoluminescence techniques. For the disordered alloy, the electron mass is determined to m*=0.092 m0, and for ordered material (band gap reduction ~ 50 meV) the value m*=0.088 m0 is found. The experimentally deduced values are compared with those obtained from a five-band kp calculation.

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