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Optical Activity of Yb3+ in MeV Ion-Implanted InP.

Published online by Cambridge University Press:  21 February 2011

S. Uekusa ,
A. Majima ,
H. Katsumata ,
Y. Noyori  and
M. Kumagai
S. Uekusa
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
A. Majima
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
H. Katsumata
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
Y. Noyori
Affiliation:
Meiji University, Kawasaki, Kanagawa, 214, Japan
M. Kumagai
Affiliation:
Kanagawa High-Technology Foundation, Kawasaki, Kanagawa, 214, Japan
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Abstract

For the evaluation of an implanted layer, photoluminescence (PL) and photoluminescence excitation (PLE) measurements, which are nondestructive and sensitive methods for identifying impurities and defects, were performed. Yb3+ -related sharp luminescence was observed at a wavelength of 1002nm, due to the transitions which occurred between the spin-orbit levels 2F5/2→2F7/2 of Yb3+ (4f13). Most efficient luminescence of Yb3+ was achieved at an excitation wavelength of around 880nm. The luminescence intensity of this peak (Yb3+) decreased with an increase in annealing temperature. Since the peak has not been observed for good samples in crystallinity, it may indicate that new, efficient energy transfer processes to rare-earth ions occur through the defect energy level. Especially, for the sample annealed at 600°C, Yb-related luminescence intensity excited by the photon energy below the band gap is about 3 times larger than that of excited by the photon energy above the band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 201
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

(1) Ennen, H. and Schneider, J., in:Proc. 13th Intern. Conf. on Defects in semiconductors, Coronado, CA (Metallurgical Society of AIME, New York,1985) 115.Google Scholar
(2) Taguchi, Akihito, Nakagome, Hiroshi, and Takahei, Kenichiro, J. Appl. Phys. 70, 5604 (1991).Google Scholar
(3) Korber, W. and Hangleiter, A., Appl. Phys. Lett. 52, 114 (1988).Google Scholar
(4) Nakagome, H., Uwai, K., and Takahei, K., Appl. Phys. Lett. 53, 1726 (1988).Google Scholar
(5) Smith, R.S., Müller, H.D., Ennen, H., Wennekers, P., and Maier, M., Appl. Phys. Lett. 50, 49 (1987).Google Scholar
(6) Ennen, H., Pomrenke, G., and Axmann, A., J. Appl. Phys. 57, 2182 (1985).Google Scholar
(7) Kozanecki, A. and Groetzschel, R., J. Appl. Phys. 68, 517 (1990).Google Scholar
(8) Aszodi, G., Weber, J., Uhleihn, Ch., Pu-Lin, L., Ennen, H., Kaufmann, U., Schneider, J., and Windscheiff, J., Phys. Rev. B31, 7767 (1985).Google Scholar
(9) Whitney, P.S., Uwai, K., Nakagome, H., and Takahei, K., Appl. Phys. Lett. 53, 2074 (1988)Google Scholar
(10) Kasatkin, V.A. and Savel'ev, V.P., Sov. Phys. Semicond. 18, 1022 (1985).Google Scholar
(ll) Kozanecki, A., Karpinska, K., and Kalinski, Z., Appl. Phys. Lett. 62, 84 (1993).Google Scholar
(12) Takahei, K., Taguchi, A., Nakagome, H., Uwai, K., and Whitney, P.S., J. Appl. Phys. 66, 4941 (1989).Google Scholar
(13) Thonke, K., Pressel, K., Bohnert, G., Stapor, A., Weber, J., Moser, M., Molassioti, A., Hangleiter, A., and Scholz, F., Semicond. Sci. Technol. 5, 1124 (1990).Google Scholar