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Optical Absorption In Hg1−xCdxTe

Published online by Cambridge University Press:  10 February 2011

Vaidya Nathan
Vaidya Nathan*
Affiliation:
Air Force Research Laboratory/VSSS, 3550 Aberdeen Ave SE, Kirtland AFB, NM 87117-5776
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Abstract

The theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. A new analytical expression for linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh and Burstein-Moss shift. Numerical results are obtained for Hg1−xCdxTe for several values of x and temperature, and compared with recent experimental data. The agreement is found to be good.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 667
Copyright
Copyright © Materials Research Society 1998

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