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Onset of GaAs Homoepitaxy and Heteroepitaxy

  • D K. Biegelsen (a1), R. D. Bringans (a1), J. E. Northrup (a1) and L.-E. Swartz (a1)

Abstract

We present scanning tunneling microscopy images and atomic models for a variety of GaAs(100) reconstructed surfaces. For homoepitaxial material we show the sequence of phases from c(4×4) through c(8×2) as the As surface concentration is reduced. For the heteroepitaxial GaAs/Si(100) growth we show the first two stages of film development, namely, Si(100):As-(1×2) monolayer coverage followed by adsorption of a submonolayer of Ga dimers. The next stages of film development are discussed.

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Onset of GaAs Homoepitaxy and Heteroepitaxy

  • D K. Biegelsen (a1), R. D. Bringans (a1), J. E. Northrup (a1) and L.-E. Swartz (a1)

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