Skip to main content Accessibility help
×
Home

Online Monitoring of PVT SiC Bulk Crystal Growth Using Digital X-Ray Imaging

  • P. J. Wellmann (a1), M. Bickermann (a1), M. Grau (a1), D. Hofmann (a1), T. L. Straubinger (a1) and A. Winnacker (a1)...

Abstract

An advanced method based on x-ray imaging is presented which allows us to visualize the ongoing processes during physical vapor transport (PVT) growth of SiC. Using a high resolution and high speed x-ray imaging detector based on image plates and digital recording we are able to follow the SiC bulk single crystal growth as well as the evolution of the SiC powder source inside the inductively heated graphite crucible on-line and quasi-continuously.

Copyright

References

Hide All
1. Tairov, Y.M. and Tsvetkov, V.F., Investigation of growth processes of ingots of silicon carbide single crystals, J. Cryst.Growth 43, 209, 1978.10.1016/0022-0248(78)90169-0
2. Ziegler, G., Lanig, P., Theis, D. and Weyerich, C., Single crystal growth of SiC substrate material for blue light emitting diodes, IEEE Trans. Electron. Devices 30, 277, 1983.10.1109/T-ED.1983.21117
3. Eckstein, R., Hofmann, D., Makarov, Y., Muiller, St. G., Pensl, G., Schmitt, E. and Winnacker, A., Analysis of the sublimation growth process of silicon carbide bulk crystals, Mat. Res. Soc. Symp. Proc. 423, 215220, 1996.10.1557/PROC-423-215
4. Hofmann, D., Eckstein, R., Kiölbl, M., Makarov, Y., Mtller, St. G., Schmitt, E., Winnacker, A., Rupp, R., Stein, R. and Vblkl, J., SiC-bulk growth by physical vapor transport and its global modeling, J. Cryst.Growth 174, 669674, 1997.10.1016/S0022-0248(97)00037-7
5. Winnacker, A., x-ray imaging with photostimulable storage phosphors and future trends, Physica Medica IX 23, 95–101, 1993.
6. Thorns, M., Burzlaff, H., Kinne, A., Lange, J., von Seggern, H., Spengler, R. and Winnacker, A., An improved x-ray image plate detector for diffractometry, Mater.Sci.Forum 107 (1), 228231, 1995.
7. Barber, P.G., Crouch, R.K., Fripp, A.L., Debnam, W.J., Berry, R.F. and Simchick, R., A procedure to visualize the melt-solid interface in Bridgeman grown germanium and lead tin telluride, J. Cryst.Growth 74, 228230, 1986.10.1016/0022-0248(86)90270-8
8. Kakimoto, K., Eguchi, M., Watanaba, H. and Hibiya, T., In-situ observation of impurity diffusion boundary layer in silicon Czrochalski growth, J. Cryst.Growth 99, 665669, 1990.10.1016/S0022-0248(08)80003-6
9. Campbell, T.A. and Koster, J.N., Visualization of liquid-solid interface morphologies in gallium subject to natural convection, J. Cryst.Growth 140, 414425, 1994.10.1016/0022-0248(94)90318-2

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed