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On the Role of Surface Diffusion and Its Relation to the Hydrogen Incorporation During Hydrogenated Amorphous Silicon Growth

Published online by Cambridge University Press:  01 February 2011

A.H.M. Smets ,
W.M.M. Kessels  and
M.C.M. van de Sanden
A.H.M. Smets
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, the Netherlands
W.M.M. Kessels
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, the Netherlands
M.C.M. van de Sanden
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, the Netherlands
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Abstract

The incorporation of hydrogen in vacancies and at void surfaces during hydrogenated amorphous silicon growth from a remote expanding thermal plasma (ETP) is systematically studied by variation of the mass growth flux Γa-Si:H and substrate temperature Tsub. An evident relation between the void incorporation and the growth parameters Γa-Si:H and Tsub has been observed. We speculate on a possible relation with the surface diffusion processes during deposition. An activation energy for surface diffusion during a-Si:H growth of 0.8-1.1 eV is obtained using this assertion, similar to the activation energy deduced from surface roughness evolution studies. For compact films hydrogen is predominantly present at vacancies, and a possible relation with the hydrogen removal mechanism during deposition is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A10.3
Copyright
Copyright © Materials Research Society 2003

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References

[1] Kessels, W.M.M., Leroux, A., Boogaarts, M.G.H., Hoefnagels, J.P.M., Sanden, M.C.M. van de, and Schram, D.C., J.Vac. Sci. Technol. A 19, 467 (2001)Google Scholar
[2] Kessels, W.M.M., Barrell, Y., Oever, P.J. van den, Hoefnagels, J.P.M., and Sanden, M.C.M. van de, Mat. Res. Soc. Symp. Proc. Vol. 762, A.9.3.1 (2003)Google Scholar
[3] Smets, A.H.M., Kessels, W.M.M., and Sanden, M.C.M. van de, Appl. Phys. Lett. 82, 865 (2003)Google Scholar
[4] Smets, A.H.M., Kessels, W.M.M., and Sanden, M.C.M. van de, Appl. Phys. Lett. 82, 1547 (2003)Google Scholar
[5] Kessels, W.M.M., Smets, A.H.M., Marra, D.C., Aydil, E.S., Schram, D.C., Sanden, M.C.M. van de, Thin Solid Films 383, 154 (2001)Google Scholar
[6] Smit, C., Williamson, D.L, Sanden, M.C.M. van de and Swaaij, R.A.C.M.M. van, Mat. Res. Soc. Symp. Proc. 762, A.15.3.1 (2003)Google Scholar
[7] Mahan, A.H., Xu, Y., Williamson, D.L., Beyer, W., Perkins, J.D., Vanacek, M., Gedvillas, L.M., and Nelson, B.P., J. Appl. Phys 90, 5038 (2001)Google Scholar
[8] Remes, Z., Vanacek, M., Mahan, A.H. and Crandall, R.S., Phys. Rev. B 56, 12710 (1997)Google Scholar
[9] Kessels, W.M.M., Severens, R.J., Sanden, M.C.M. van de, and Schram, D.C., J. NonCryst. Sol. 227-230, 133 (1998)Google Scholar
[10] Kampas, F.J. and Griffith, R.W., Appl. Phys. Lett. 39, 407 (1981)Google Scholar
[11] Matsuda, A. et al., Surf. Sci. 227, 50 (1990); J.R. Doyle et al. J. Appl. Phys. 68, 4375 (1990); K. Maeda et al., Mat. Res. Soc. Symp. Proc. Vol. 377, 131 (1995); J. Robetson, J. Appl. Phys. 84, 2426 (2000), A. Terakwa et al., Phys. Rev. B 62, 16808 (2000)Google Scholar
[12] Smets, A.H.M., PhD. Thesis, Eindhoven, The Netherlands (2002), http://alexandria.tue.nl/extra2/200211441.pdf Google Scholar
[13] Smets, A.H.M., Schram, D.C., and Sanden, M.C.M. van de, J. Appl. Phys. 88, 6388 (2000)Google Scholar
[14] Bray, K.R. and Parsons, G.N., Phys. Rev. B 65, 035311 (2001)Google Scholar
[15] Street, R.A. and Winer, K., Phys. Rev. B 40, 6236 (1989)Google Scholar
[16] Dalal, V.L., Seberger, P, Ring, M. and Sharma, P., in proceedings of 2nd conference of cat CVD (Hot-wire) process, Denver (2002)Google Scholar