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On the Origin of the Contrast Inhomogeneities Found on In0.52Al0.48As Layers Grown on InP Substrates At High Temperatures

Published online by Cambridge University Press:  25 February 2011

F. Peiro ,
A. Cornet ,
J. R. Morante  and
A. Georgakilas
F. Peiro
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain. Serveis Científico-Tècnics. U. Barcelona. L. Solé i Sabarís, 1–3. 08028 Barcelona, Spain.
A. Cornet
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain.
J. R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain.
A. Georgakilas
Affiliation:
CALCE. Electr. Pack. Research Center, Univ. Maryland, College Park, MD 20742., USA.
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Abstract

The present work deal with the coarse contrast modulation along the <010> directions observed in (100) planar view TEM observations of In0.52Al0.48As layers grown on InP substrates at temperatures higher than 550°C. The most important features of these contrast inhomogeneites are briefly reviewed. Besides, the appearance of the contrast in [011] cross-sectioned specimens is presented and its origin related to precipitates at the layer-substrate interface. The density of precipitates (ρp) has been found to increase as Tg rises, and an approximate value of the activation energy needed to induce the precipitation has been derived from the correlation of ρp and Tg.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 133
Copyright
Copyright © Materials Research Society 1993

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References

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