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On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs System

  • K. Wuyts (a1), G. Langouche (a1), H. Vanderstraeten (a1), R.E. Silverans (a1), M. Van Hove (a2), M. Van Rossum (a2), H. Münder (a3) and H. Lüth (a3)...

Abstract

Alloyed Au/Te/n–GaAs ohmic contacts, with contact resistivities comparable to those of the AuGe device standard, have been developed and studied by Mässbauer spectroscopy, Raman scattering and X-Ray Diffraction. The formation of Au-doped Ga2Te3 crystallites, grown epitaxially on a defectively GaAs surface was observed. No evidence for the formation of an n++–GaAs surface layer could be derived. The interpretation of all experimental results leads to a description of the ohmic conduction mechanism based on a resonant tunneling process assisted by defect/impurity related deep levels through low barrier metal/Te/(Au)Ga2Te3/GaAs interfaces

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On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs System

  • K. Wuyts (a1), G. Langouche (a1), H. Vanderstraeten (a1), R.E. Silverans (a1), M. Van Hove (a2), M. Van Rossum (a2), H. Münder (a3) and H. Lüth (a3)...

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