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On the Mechanism of Intrinsic Gettering by Butterfly-Type Defects in Silicon
Published online by Cambridge University Press: 28 February 2011
Abstract
We have recently found that a very effective intrinsic gettering of metal contaminants in silicon can be realized via interaction of native defects. This process makes it possible to extend intrinsic gettering of crystals with low or virtually zero oxygen concentration. Transmission electron microscopy and energy dispersive x-ray spectroscopy were used to identify the microscopic structure of the gettering centers in oxygen-free silicon. These centers exhibited butterfly-type shape and they consisted of the interstitial type extended dislocation loops of 0.1 to 0.7 μm diameter. Small precipitates (3-15 nm diameter) of metal (Cu, Ni, Fe) silicides were found inside the dislocation loops and/or on the dislocation lines. The origin of butterfly-type gettering centers will be discussed in terms of the intrinsic gettering model involving lattice supersaturation with silicon self-interstitials as a driving force for their complexing and subsequent formation of dislocation loops and precipitates which immobilize metal contaminants.
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- Copyright © Materials Research Society 1986