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On the Mechanism of Fatigue in Micron-Scale Structural Films of Polycrystalline Silicon

Published online by Cambridge University Press:  15 March 2011

C. L. Muhlstein ,
E. A. Stach  and
R. O. Ritchie
C. L. Muhlstein
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
E. A. Stach
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
R. O. Ritchie
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
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Abstract

2-νm thick structural films of polycrystalline silicon are shown to display “metal-like” stress- life fatigue behavior in room air, with failures occurring after >1011 cycles at stresses as low as half the fracture strength. Using in situ measurements of the specimen compliance and transmission electron microscopy to characterize such damage, the mechanism of thin-film silicon fatigue is deduced to be sequential oxidation and moisture-assisted cracking in the native SiO2 layer. This mechanism can also occur in bulk silicon but it is only relevant in thin films where the critical crack size for catastrophic failure can be exceeded within the oxide layer. The fatigue susceptibility of thin-film silicon is shown to be suppressed by alkene-based self- assembled monolayer coatings that prevent the formation of the native oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 687: Symposium B – Materials Science of Microelectromechanical Systems (MEMS) Devices IV , 2001 , B10.7/P6.7
Copyright
Copyright © Materials Research Society 2002

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References

1. Connally, J.A. and Brown, S.B., Science, 256, 1537–39 (1992).Google Scholar
2. Brown, S.B., Van Arsdell, W. and Muhlstein, C.L., in Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97), edited by Senturia, S., IEEE, 1997, pp. 591–93.Google Scholar
3. Muhlstein, C. and Brown, S., in Proceedings of the NSF/AFOSR/ASME Workshop on Tribology Issues and Opportunities in MEMS, edited by Bhushan, B., Kluwer Academic, 1997, pp. 80.Google Scholar
4. Muhlstein, C.L., Brown, S.B. and Ritchie, R.O., in Materials Science of Microelectromechanical System (MEMS) Devices III, edited by , H. Kahn Boer, M. de Judy, M., and Spearing, S.M., MRS, 2000, pp. EE5.8.1–EE5.8.6.Google Scholar
5. Muhlstein, C.L., Brown, S.B. and Ritchie, R.O., JMEMS, in press (2001).Google Scholar
6. Muhlstein, C.L., Brown, S.B. and Ritchie, R.O., Sensors and Actuators A, 94, 177–188 (2001).Google Scholar
7. Kahn, H., Ballarini, R., Mullen, R.L. and Heuer, A.H., Proc. Roy. Soc. A, 455, 3807–23 (1999).Google Scholar
8. Van Arsdell, W.W. and Brown, S.B., JMEMS, 8, 319–27 (1999).Google Scholar
9. Komai, K., Minoshima, K. and Inoue, S., Micros. Tech., 5, 30–37 (1998).Google Scholar
10. Allameh, S.M., Gally, B., Brown, S. and Soboyejo, W.O., in Materials Science of Microelectromechanical System (MEMS) Devices III, edited by Kahn, H., Boer, M. de, Judy, M., and Spearing, S.M., MRS, 2000, pp. EE2.3.1–EE2.3.6.Google Scholar
11. Muhlstein, C.L., Stach, E.A. and Ritchie, R.O., Appl. Phys. Let., in review (2001).Google Scholar
12. Muhlstein, C.L., Stach, E.A. and Ritchie, R.O., Acta Mater., submitted (2001).Google Scholar
13. Ritchie, R.O., Int. J. Fract., 100, 55–83 (1999).Google Scholar
14. Suresh, S., Fatigue of Materials, 2nd ed., Cambridge University Press, Cambridge, England, 1998.Google Scholar
15. Kahn, H., Tayebi, N., Ballarini, R., Mullen, R.L. and Heuer, A.H., in Transducers '99: 10th International Conference on Solid State Sensors and Actuators, Elsevier, 1999, pp. 274–80.Google Scholar
16. Lawn, B.R., Marshall, D.B. and Chantikul, P., J. Mater. Sci., 16, 1769–75 (1981).Google Scholar
17. Muhlstein, C.L., Howe, R.T. and Ritchie, R.O., Mech. Mater., in review (2001).Google Scholar
18. Fargeix, A. and Ghibaudo, G., J. Appl. Phys., 56, 589–91 (1984).Google Scholar
19. Dauskardt, R.H., Acta Metal. Mater., 41, 2765–81 (1993).Google Scholar
20. Lathabai, S., Rödel, J. and Lawn, B.R., J. Am. Ceram. Soc., 74, 1340–48 (1991).Google Scholar
21. Lawn, B.R., Hockey, B.J. and Wiederhorn, S.M., J. Mater. Sci., 15, 12 (1980).Google Scholar
22. Ashurst, W.R., Yau, C., Carraro, C., Maboudian, R. and Dugger, M.T., JMEMS, 10, 41–49 (2001).Google Scholar