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On the Forward Conduction Mechanisms in SiC P-N Junctions

  • Lourdes Pelaz (a1), J. Vicente (a1), M. Jaraiz (a1), L. Bailon (a1) and J. Barbolla (a1)...


ABSTRACT:In SiC junctions, it is usual to find the ideality factor n=2 (or slightly higher) in 6H-SiC and n>2 and temperature dependent for 3C-SiC. However, the recombination current yields an ideality factor no higher than 2. This value can be slightly increased by considering the Poole-Frenkel effect (PFE), so that the 6H-SiC junction characteristics can be properly fitted. On the other hand, 3C-SiC junction characteristics, which are quite different from the ideal ones, cannot be satisfactorily explained on the basis of this model and the multitunnel capture-emission mechanism is proposed as the responsible for this behavior.



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1. Landolf-BÖrnstein, , Physics of Group IV Elements and III-V compounds (Springer-Verlag, Berlin, 1982), p. 132.
2. Davis, R.F., Palmour, J.W. and Edmond, J.A., Mat. Res. Soc. Symp. Proc. 162, 463 (1990).
3. Sze, S.M., Physics of Semiconductor Devices, 2nd. ed. (John Wiley & Sons, New York, 1981) p. 92.
4. Frenkel, J., Phys. Rev. 54, 657 (1938).
5. MEDICI, Technology Modeling Associates, Inc., 1991.
6. Edmond, J.A., Waltz, D.G., Brueckner, S., Kong, H., Palmour, J.W. and Carter, C.H. Jr, Proc. 1st. Int. Hi. Temp. Electron. Conf., 500 (1991).
7. Edmond, J.A., Das, K. and Davis, R.F., J. Appl. Phys. 63, 922 (1988).
8. Kim, H.J., Davis, R.F., Cox, X.B. and Linton, R.W., J. Electrochem. Soc. 134, 2269 (1987).
9. Stecki, A.J. and Li, J.P., IEEE Trans. Electron Devices 39, 64 (1992).
10. Pelaz, L., Orantes, J.L., Enríquez, L., Bailón, L. and Barbolla, J., (to be published).
11. Suzuki, A., Uemoto, A., Shigeta, M., Furukawa, K. and Nakajima, S., Extended Abstracts of the 18th Conference on Solid Stade Devices and Materials, 101 (1986).
12. Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S. and Matus, L.G., IEEE Electron Device Letters 14, 136 (1993).
13. Kane, E.O., Phys, J.. Chem. Solids 12, 181 (1959).
14. Matsuura, H., Okuno, T., Okushi, H. and Tanaka, K., J. Appl. Phys. 55, 1012 (1984).
15. Jepps, N.E. and Page, T.F., Progress in Crystal Growth and Characterization 7, 259 (1983).

On the Forward Conduction Mechanisms in SiC P-N Junctions

  • Lourdes Pelaz (a1), J. Vicente (a1), M. Jaraiz (a1), L. Bailon (a1) and J. Barbolla (a1)...


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