Hostname: page-component-7bb8b95d7b-495rp Total loading time: 0 Render date: 2024-09-25T08:38:07.255Z Has data issue: false hasContentIssue false
  • English
  • Français

On the Evolution of Copper Oxide Films Grown on α-A12O3 By Pulsed-Laser Ablation

Published online by Cambridge University Press:  15 February 2011

Michael W. Bench ,
Kevin B. Sartain ,
Jason R. Heffelfinger  and
C. Barry Carter
Michael W. Bench
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
Kevin B. Sartain
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
Jason R. Heffelfinger
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
Get access

Abstract

Pulsed-laser ablation was used to deposit copper oxide onto single-crystal substrates of (0001) OC-AI2O3 at temperatures ranging up to 900°C. Prior to deposition, the substrates were chemically cleaned and annealed to create a surface structure of low-index terraces separated by crystallographic steps. After deposition, the samples were characterized using transmission electron microscopy and scanning electron Microscopy.

The deposited film evolved by an island growth process, with the morphology of the particles being dependent on the growth conditions, substrate orientation, and nature of the substrate surface. Both CuO and Cu2O were produced by the depositions. The phase observed changed from CuO to Cu2O with increasing deposition temperature, as would be expected based on the equilibrium phase diagram. In depositions performed on (0001) alumina substrates with widely spaced surface steps, it was found that on some surface terraces one characteristic particle morphology was produced whereas on others a second morphology was dominant. This suggests that the plane of surface termination in the alumina lattice, which consists of a layer of either Al or O in this orientation, is influencing the growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 491
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Roos, A. and Karlsson, B., Solar Energy Mater. 7, 467 (1983).CrossRefGoogle Scholar
2. Baglin, J.E.E., Schrott, A.G., Thompson, R.D., Tu, K.N., and Segmüller, A., Nucl. Instr. Meth. B19/20, 782 (1987).Google Scholar
3. Kim, Sung Tae and Kim, Chong Hee, J. Mater. Sci. 27, 2061 (1992).CrossRefGoogle Scholar
4. Susnitzky, David W. and Barry Carter, C., Surface Sci. 265, 127 (1992).CrossRefGoogle Scholar
5. Susnitzky, David W. and Barry Carter, C., J. Mater. Res. 6, 1958 (1991).CrossRefGoogle Scholar
6. See papers in Laser Ablation for Materials Synthesis, edited by Paine, D.C. and Bravman, J.C. (Mater. Res. Soc. Proc. 191, Pittsburgh, PA, 1990).Google Scholar
7. See papers in Laser Ablation: Mechanisms and Applications - II. edited by John Miller, C. and Geohegan, David B. (AIP Conference Proceedings 288, New York, 1994).Google Scholar
8. Ogale, S.B., Bilurkar, P.G., Mate, Nitant, Kanetkar, S.M., Parikh, Nalin, and Patnaik, Bijoy, J. Appl. Phys. 72, 3765 (1992).Google Scholar
9. David Susnitzky, W. and Barry Carter, C., J. Am. Ceram. Soc. 75, 2463 (1992).Google Scholar
10. Bench, M.W., Sartain, K.B., Mallamaci, M.P., and Carter, C.B., Proc. 51st Annual Meeting of the Microscopy Society of America, edited by Bailey, G.W. and Rieder, C.L. (San Francisco Press, San Francisco, CA, 1993).Google Scholar
11. Weichman, F.L. and Reyes, J.M., J. Phys. 58, 325 (1980).Google Scholar
12. Guo, J., Ellis, D.E., and Lam, D.J., Phys Rev. B 45, 13647 (1992).Google Scholar
13. Guo, J., Chang, H.L.M., and Lam, D.J., Appl. Phys. Lett. 61, 3116 (1992).Google Scholar