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On the Burste In-Moss Shift in Quantum Confined Wide-Band Gap Semiconductors

Published online by Cambridge University Press:  25 February 2011

Kamakhya P. Ghatak  and
Badal De
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, Faculty of Engineering & Technology, University of Jadavpur, Calcutta 700032, India
Badal De
Affiliation:
John Brown E and C inc., 333 Ludlow street, P.O. Box 1422, Connecticut 06902, USA.
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Abstract

We study the Burstein-Moss shift (BMS) in quantum wiies and quantum dots of wide-gap semiconductors, taking Ge as an example, it is found that the BMS increases with increasing electron concentration in a ladder like manner. The numerical values of the BMS is greatest in quantum dots and least in quantum wells. The theoretical analysis is in agreement with the experimental results as given elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 373
Copyright
Copyright © Materials Research Society 1992

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References

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