Hostname: page-component-7bb8b95d7b-5mhkq Total loading time: 0 Render date: 2024-09-26T03:14:24.379Z Has data issue: false hasContentIssue false
  • English
  • Français

On the Amorphization of Silicon by Light Ion Implantation: Ion Flux and Substrate Temperature Effects

Published online by Cambridge University Press:  26 February 2011

A. Claverie ,
A. Roumili ,
N. Gessinn  and
J. Beauvillain
A. Claverie
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP 4347, 31055 Toulouse, France
A. Roumili
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP 4347, 31055 Toulouse, France
N. Gessinn
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP 4347, 31055 Toulouse, France
J. Beauvillain
Affiliation:
CEMES/CNRS, 29 rue J. Marvig, BP 4347, 31055 Toulouse, France
Get access

Abstract

In this work, we have observed by cross-sectional electron microscopy (XTEM) and high resolution electron microscopy (HREM) the kinetics of silicon amorphization during nitrogen and helium bombardments for various dose rates and substrate temperatures. It is shown that the progression of the cla interfaces can be accurately described by the “Critical Damage Energy Density” (CDED) model for both ions at 100°K. At this temperature however, dose rate effects are unimportant. When increasing the substrate temperature up to 300°K, the amorphization efficiency is lowered. At 300°K dose rate effects are important and we show that for higher dose rates, the efficiency of the amorphization process is improved. In this case, the amorphous layers created by helium implantation are situated in the near surface region in apparent contradiction with damage calculations. The present experimental study demonstrates the competition which exists between the generation rate of point defects and the anihilation rate of these defects. Therefore, it is shown that the position of the a-layers created by light ion implantation at room temperature can be predicted by using a three-dimensional damage energy calculation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 369
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Eisen, F.H. and Wech, B., Eur.Conf. on Ion Impl., Reading (Mass.), Peter Peregrinus Ltd., Stevenage, 227 (1970).Google Scholar
2) Picraux, S.T. and Vook, F.L., Rad. Effects, 11, 179 (1971).Google Scholar
3) Al-Hashmi, S.A.R. and Carter, G., Rad. Effects 102, 83 (1987).Google Scholar
4) Stein, H.J., Vook, F.L., Brice, D.K., Boarders, J.A. and Picraux, S.T., Proc. 1st Int. Conf. on Ion Impl., Gordon and Breach, London, 17 (1971).Google Scholar
5) Narayan, J., Fathy, D., Oen, O.S. and Holland, O.W., J. Vac. Sci. Technol. A, 2, 1303 (1984).Google Scholar
6) Claverie, A., Vieu, C., Faure, J. and Beauvillain, J., Mater. Sci. Eng., B2, 99 (1989).Google Scholar
7) Claverie, A., Vieu, C., Faure, J. and Beauvillain, J., J. Appl. Phys., 64(9), 4415 (1988).Google Scholar
8) Jones, K.S., Sadana, D.K., Prussin, S., Washburn, J., Weber, E.R. and Hamilton, W.J., J. Appl. Phys., 63(5), 1414 (1988).Google Scholar
9) Vieu, C., Claverie, A., Faure, J. and Beauvillain, J., Nucl. Instr. Meth. in Phys. Res. B, 36, 137 (1989).Google Scholar
10) Claverie, A., Vieu, C. and Beauvillain, J., Appl. Surf. Science, 43, 106 (1989).Google Scholar
11) Biersack, J.P. and Ziegler, J.F., computer code TRIM90, or first in Nucl. Instr. Meth., 182–183, 199 (1981).Google Scholar
12) Marou, F., Claverie, A., Salles, Ph. and Martinez, A., to be published in Nucl. Instr. Meth. in Phys. Res. B, january 1991 issue.Google Scholar
13) Claverie, A., Roumili, A. and Beauvillain, J., Mat. Sci. Eng., B4, 205 (1989).Google Scholar
14) Corbett, J.W., Karins, J.P. and Tan, T.Y., Nucl. Intrum. Meth., 182–183, 457 (1981).Google Scholar
15) Brinkman, J.A., Amer. J. Phys., 24, 246 (1956).Google Scholar